Datasheet > AO3414

AO3414

更新时间： 2024-10-15 18:09:35

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	603K
描述
SOT-23

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中文翻译

获取价格

数据手册

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AO3414 数据手册

AO3414

LOW VOLTAGE MOSFET (N-CHANNEL)

FEATURES

 Ultra low on-resistance:V_DS=20V,R_DS(ON)≤62mΩ@V_GS=4.5V,I_D=3A

 For PWM application

 For Load switch application

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Symbol

V_DS

V_GS

I_D

Value

±8

2.5

Unit

Gate-source voltage

TA=25°C

TA=70°C

Continuous drain current

I_D

Pulsed drain current

IDM

TA=25°C

P_D

1.4

0.9

125

150

-55 ~+150

°C/W

°C

Power dissipation

TA=70°C

Thermal resistance from Junction to ambient

Junction temperature

R_θJA

Storage temperature

TSTG

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min Typ Max Unit

Conditions

VGS=0V, ID=250μA

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

V(BR)DSS*

I_DSS

I_GSS

uA V_DS=20V,

V =0V

±100 nA

V_DS=0V,

V =±8V

V_GS(th)

0.4

0.7

mΩ

V =V , I =250μA

VGS=4.5V, ID=3A

VGS=2.5V, ID=2.8A

Drain-source on-resistance)

R_DS(ON)

V =1.8V, I =2.5A

I_D(ON)

g_FS

R_g

V_DS=5V, VGS=4.5V

VDS=5V, ID=3A

VGS=0V, VDS=0V, f=1MHz

On-State Drain Current

Forward transconductance

Gate resistance

4.5

C_iss

C_oss

C_rss

t_d(on)

t_r

t_d(off)

t_f

Q_g

Q_gs

Q_gd

V_SD

I_S

t_rr

Q_rr

260

2.5

3.2

2.9

0.4

0.6

0.7

320

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Turn-on rise time

Turn-off delay time

Turn-off fall time

Total gate charge

Gate-source charge

V_{DS=10V, VGS=0V, f=1MHz}

nS VDS=10V, VGS=5V,

RGEN=6Ω, RL=3.3Ω

3.8

VDS=10V,VGS=4.5V,ID=3A

Gate-drain charge

Diode forward voltage

Diode forward current

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

IS=1A, VGS=0V

3.8

nS IF=3A, dI/dt=100A/us

nC IF=3A, dI/dt=100A/us

*Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 0.5% .

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