AO3414L

更新时间： 2024-01-23 13:09:05

品牌	Logo	应用领域
美国万代 - AOS		晶体晶体管
页数	文件大小	规格书
4页	111K
描述
N-Channel Enhancement Mode Field Effect Transistor

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AO3414L 数据手册

AO3414

N-Channel Enhancement Mode Field Effect Transistor

General Description

Features

The AO3414 uses advanced trench technology to

provide excellent R_DS(ON), low gate charge and

operation with gate voltages as low as 1.8V. This

device is suitable for use as a load switch or in PWM

applications. Standard Product AO3414 is Pb-free

(meets ROHS & Sony 259 specifications). AO3414L

is a Green Product ordering option. AO3414 and

AO3414L are electrically identical.

V_DS(V) = 20V

I_D= 4.2 A (V_GS= 4.5V)

R_DS(ON)< 50mΩ (V_GS= 4.5V)

R_DS(ON)< 63mΩ (V_GS= 2.5V)

R_DS(ON)< 87mΩ (V_GS= 1.8V)

TO-236

(SOT-23)

Top View

Absolute Maximum Ratings T_A=25°C unless otherwise noted

Parameter

Symbol

Maximum

Units

V_DS

Drain-Source Voltage

V_GS

Gate-Source Voltage

Continuous Drain

Current ^A

±8

4.2

T_A=25°C

T_A=70°C

I_D

3.2

Pulsed Drain Current ^B

I_DM

T_A=25°C

T_A=70°C

1.4

P_D

Power Dissipation ^A

0.9

T_J, T_STG

Junction and Storage Temperature Range

-55 to 150

°C

Thermal Characteristics

Parameter

Maximum Junction-to-Ambient ^A

Maximum Junction-to-Lead ^C

Symbol

Typ

Max

Units

°C/W

t ≤ 10s

R_θJA

Steady-State

100

125

R_θJL

Alpha & Omega Semiconductor, Ltd.

12 3 4

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