Datasheet > AO3415

AO3415

更新时间： 2024-11-19 18:09:11

品牌	Logo	应用领域
合科泰 - HOTTECH		/
页数	文件大小	规格书
6页	542K
描述
SOT-23

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中文翻译

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数据手册

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AO3415 数据手册

AO3415

LOW VOLTAGE MOSFET (P-CHANNEL)

FEATURES

 V_DS=-20V,R_DS(ON)≤41mΩ@V_GS=-4.5V,I_D=-4A

 Low on-resistance and low gate charge

 For Load switch applications

 ESD protected

 Surface Mount device

SOT-23

MECHANICAL DATA



Case: SOT-23

Case Material: Molded Plastic. UL flammability

Classification Rating: 94V-0

Weight: 0.008 grams (approximate)

MAXIMUM RATINGS (T_A= 25°C unless otherwise noted)

Parameter

Drain-source voltage

Symbol

VDS

Value

-20

Unit

Gate-source voltage

VGS

±8

T_A=25°C

T_A=70°C

-4

-3.5

-30

1.5

Continuous drain current

Pulsed drain current

IDM

T_A=25°C

T_A=70°C

Power dissipation

Thermal resistance from Junction to ambient

Junction temperature

Storage temperature

RθJA

TSTG

100

150

-55~+150

°C/W

°C

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Drain-Source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

Gate-threshold voltage

Symbol Min Typ

Max Unit

Conditions

V(BR)DSS*

-20

V =0V, I =-250μA

I_DSS

I_GSS

-1

μA V_DS=-20V,

VGS=0V

V^GS=±8V

VDS=VGS, ID=-250μA

±10

-0.3 -0.57 -0.9

-30

μA V_DS=0V,

V_GS(th)

ID(ON)*

On state drain current

V =-4.5V, V =-5V

VGS=-4.5V, ID=-4A

VGS=-2.5V, ID=-4A

VGS=-1.8V, ID=-2A

mΩ

Drain-source on-resistance

R_DS(ON)

V =-1.5V, I =-1A

VDS=-5V, ID=-4A

V_DS=0V,

g_FS

R_g

Forward transconductance

Gate resistance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

VGS=0V, f=1MHz

C_iss

C_oss

C_rss

t_d(on)

t_r

600 751

905

150

115

V_{DS=-10V, VGS=0V, f=1MHz}

115

Turn-on rise time

nS VGS=-4.5V,VDS=-10V,

RGEN=3Ω,RL=2.5Ω

t_d(off)

t_f

Q_g

Q_gs

Q_gd

V_SD

I_S

9.3

2.2

-0.64

Turn-off delay time

Turn-off fall time

Total gate charge

Gate-source charge

7.4

0.8

1.3

1.2

3.1

-1

-2

VDS=-10V,VGS=-4.5V,ID=-4A

Gate-drain charge

Diode forward voltage

Diode forward current

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

IS=-1A, VGS=0V

t_rr

Qrr

IF=-4A,dI/dt=500A/μs

* Pulse test ; Pulse width ≤300µs, Duty cycle ≤ 0.5% .

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