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AO3414 PDF预览

AO3414

更新时间: 2024-11-18 08:30:59
品牌 Logo 应用领域
美国万代 - AOS 晶体晶体管
页数 文件大小 规格书
4页 111K
描述
N-Channel Enhancement Mode Field Effect Transistor

AO3414 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PDSO-G3Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:1.65
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):4.2 A最大漏源导通电阻:0.05 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-236
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):30 A
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AO3414 数据手册

 浏览型号AO3414的Datasheet PDF文件第2页浏览型号AO3414的Datasheet PDF文件第3页浏览型号AO3414的Datasheet PDF文件第4页 
AO3414  
N-Channel Enhancement Mode Field Effect Transistor  
General Description  
Features  
The AO3414 uses advanced trench technology to  
provide excellent RDS(ON), low gate charge and  
operation with gate voltages as low as 1.8V. This  
device is suitable for use as a load switch or in PWM  
applications. Standard Product AO3414 is Pb-free  
(meets ROHS & Sony 259 specifications). AO3414L  
is a Green Product ordering option. AO3414 and  
AO3414L are electrically identical.  
VDS (V) = 20V  
ID = 4.2 A (VGS = 4.5V)  
RDS(ON) < 50m(VGS = 4.5V)  
RDS(ON) < 63m(VGS = 2.5V)  
RDS(ON) < 87m(VGS = 1.8V)  
TO-236  
(SOT-23)  
Top View  
D
S
G
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted  
Parameter  
Symbol  
Maximum  
Units  
VDS  
Drain-Source Voltage  
20  
V
VGS  
Gate-Source Voltage  
Continuous Drain  
Current A  
±8  
4.2  
V
A
TA=25°C  
TA=70°C  
ID  
3.2  
Pulsed Drain Current B  
IDM  
15  
TA=25°C  
TA=70°C  
1.4  
PD  
W
Power Dissipation A  
0.9  
TJ, TSTG  
Junction and Storage Temperature Range  
-55 to 150  
°C  
Thermal Characteristics  
Parameter  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Ambient A  
Maximum Junction-to-Lead C  
Symbol  
Typ  
70  
Max  
90  
Units  
°C/W  
°C/W  
°C/W  
t 10s  
RθJA  
Steady-State  
Steady-State  
100  
63  
125  
80  
RθJL  
Alpha & Omega Semiconductor, Ltd.  

AO3414 替代型号

型号 品牌 替代类型 描述 数据表
PMV56XN,215 NXP

功能相似

PMV56XN - N-channel TrenchMOS extremely low level FET TO-236 3-Pin

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