Datasheet > UPA807T

UPA807T

更新时间： 2024-09-09 03:57:03

品牌	Logo	应用领域
CEL		晶体晶体管光电二极管放大器
页数	文件大小	规格书
12页	215K
描述
NPN SILICON HIGH FREQUENCY TRANSISTOR

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中文翻译

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数据手册

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UPA807T 数据手册

NPN SILICON HIGH

FREQUENCY TRANSISTOR

UPA807T

FEATURES

OUTLINE DIMENSIONS (Units in mm)

•

SMALL PACKAGE STYLE:

2 NE686 Die in a 2 mm x 1.25 mm package

PACKAGE OUTLINE S06

(Top View)

LOW NOISE FIGURE:

NF = 1.5 dB TYP at 2 GHz

2.1 ± 0.1

1.25 ± 0.1

HIGH GAIN:

|S21E|²= 9 dB TYP at 2 GHz

•

HIGH GAIN BANDWIDTH: fT = 13 GHz

0.65

LOW CURRENT OPERATION

2.0 ± 0.2

0.2 (All Leads)

1.3

DESCRIPTION

0.9 ± 0.1

NEC's UPA807T is two NPN high frequency silicon epitaxial

transistors encapsulated in an ultra small 6 pin SMT package.

Each transistor is independently mounted and easily config-

ured for either dual transistor or cascode operation. The high

fT, low voltage bias and small size make this device suited for

various hand-held wireless applications.

0.7

+0.10

0.15

- 0.05

0 ~ 0.1

PIN OUT

1. Collector Transistor 1

2. Emitter Transistor 1

3. Collector Transistor 2

4. Emitter Transistor 2

5. Base Transistor 2

6. Base Transistor 1

Note:

Pin 3 is identified with a circle on the bottom of the package.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

UPA807T

S06

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

ICBO

IEBO

Collector Cutoff Current at VCB = 5 V, IE = 0

µA

0.1

Emitter Cutoff Current at VEB = 1 V, IC = 0

hFE

Forward Current Gain at VCE = 2 V, IC = 7 mA

Gain Bandwidth at VCE = 2 V, IC = 7 mA, f = 2 GHz

Feedback Capacitance at VCB = 2 V, IE = 0, f = 1 MHz

Insertion Power Gain at VCE = 2 V, IC =7 mA, f = 2 GHz

Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 GHz

100

0.4

140

GHz

Cre²

|S21E|²

0.6

7.5

1.5

hFE1 = Smaller Value of Q1, or Q2

hFE2 = Larger Value of Q1 or Q2

hFE1/hFE2

hFE Ratio:

0.85

Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use

part number UPA807T-T1, 3K per reel.

California Eastern Laboratories

12 3 4 5 6 7...12

中文翻译

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与UPA807T相关器件

型号	品牌	获取价格	描述	数据表
UPA807T-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.01A I(C), 2-Element, S Band, Silicon, NPN,
UPA807T-KB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.01A I(C), 2-Element, L Band, Silicon, NPN, PLASTIC,
UPA807T-KB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.01A I(C), 2-Element, L Band, Silicon, NPN, PLASTIC,
UPA807T-T1	NEC	获取价格	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SU
UPA807T-T1	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
UPA807T-T1-A	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
UPA807T-T1KB	RENESAS	获取价格	2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SUPERMINI-6
UPA807T-T1KB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.01A I(C), 2-Element, L Band, Silicon, NPN, PLASTIC,
UPA807T-T1KB-A	NEC	获取价格	暂无描述
UPA808	NEC	获取价格	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SU