UPA808T-T1KB

更新时间： 2024-09-09 13:02:23

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器小信号双极晶体管射频小信号双极晶体管微波光电二极管
页数	文件大小	规格书
12页	67K
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中文翻译

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数据手册

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UPA808T-T1KB 数据手册

DATA SHEET

SILICON TRANSISTOR

µPA808T

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

(WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD

PACKAGE DRAWINGS

(Unit: mm)

FEATURES

•

Low Noise

NF = 1.3 dB TYP. @V^CE= 2 V, IC = 3 mA, f = 2 GHz

NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz

A Super Mini Mold Package Adopted

2.1±0.1

1.25±0.1

•

Built-in 2 Transistors (2 × 2SC5184)

ORDERING INFORMATION

PART NUMBER

QUANTITY

PACKING STYLE

µPA808T

Loose products

(50 PCS)

Embossed tape 8 mm wide. Pin 6

(Q1 Base), Pin 5 (Q2 Base), Pin 4

(Q2 Emitter) face to perforation

side of the tape.

µPA808T-T1

Taping products

(3 KPCS/Reel)

Remark If you require an evaluation sample, please contact an

NEC Sales Representative. (Unit sample quantity is 50

pcs.)

PIN CONFIGURATION (Top View)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

SYMBOL

VCBO

VCEO

VEBO

RATING

UNIT

Total Power Dissipation

90 in 1 element

180 in 2 elements^Note

Junction Temperature

Storage Temperature

150

°C

Tstg

–65 to +150

PIN CONNECTIONS

1. Collector (Q1) 4. Emitter (Q2)

2. Emitter (Q1) 5. Base (Q2)

3. Collector (Q2) 6. Base (Q1)

Note 110 mW must not be exceeded in 1 element.

This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.

Document No. P12154EJ2V0DS00 (2nd edition)

(Previous No. ID-3642)

Date Published November 1996 N

Printed in Japan

1995

1994

12 3 4 5 6 7...12

中文翻译

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