Datasheet > UPA810T_09

UPA810T_09

更新时间： 2024-11-02 01:21:35

品牌	Logo	应用领域
CEL		/
页数	文件大小	规格书
2页	486K
描述
NPN SILICON HIGH FREQUENCY TRANSISTOR

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中文翻译

获取价格

数据手册

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UPA810T_09 数据手册

PRELIMINARY DATA SHEET

SILICON TRANSISTOR

UPA810T

NPN SILICON HIGH

FREQUENCY TRANSISTOR

OUTLINE DIMENSIONS (Units in mm)

FEATURES

PACKAGE OUTLINE S06

(Top View)

•

SMALL PACKAGE STYLE:

2 NE856 Die in a 2 mm x 1.25 mm package

2.1 ± 0.1

LOW NOISE FIGURE:

NF = 1.2 dB TYP at 1 GHz

1.25 ± 0.1

HIGH GAIN:

|S21E|²= 9.0 dB TYP at 1 GHz

0.65

•

EXCELLENT LOW VOLTAGE, LOW CURRENT

PERFORMANCE

HIGH COLLECTOR CURRENT: 100 mA

2.0 ± 0.2

0.2 (All Leads)

1.3

DESCRIPTION

The UPA810T is two NPN high frequency silicon epitaxial

transistors encapsulated in an ultra small 6 pin SMT package.

Each transistor is independently mounted and easily config-

ured for either dual transistor or cascode operation. The high

fT, low voltage bias and small size make this device suited for

various hand-held wireless applications.

0.9 ± 0.1

0.7

0.15

- 0.05

0 ~ 0.1

PIN OUT

1. Collector Transistor 1

2. Base Transistor 2

3. Collector Transistor 2

4. Emitter Transistor 2

5. Emitter Transistor 1

6. Base Transistor 1

Note:

Pin 3 is identified with a circle on the bottom of the package.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

UPA810T

S06

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

ICBO

IEBO

Collector Cutoff Current at VCB = 10 V, IE = 0

Emitter Cutoff Current at VEB = 1 V, IC = 0

μA

1.0

hFE

Forward Current Gain at VCE = 3 V, IC = 7 mA

Gain Bandwidth at VCE = 3 V, IC = 7 mA

120

4.5

0.7

250

GHz

3.0

Cre²

|S21E|²

Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz

Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz

Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz

1.5

2.5

1.2

hFE1 = Smaller Value of Q1, or Q2

hFE2 = Larger Value of Q1 or Q2

hFE1/hFE2

hFE Ratio:

0.85

Notes: 1. Pulsed measurement, pulse width ≤ 350 μs, duty cycle ≤ 2 %.

2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.

For Tape and Reel version use part number UPA810T-T1, 3K per reel.

The information in this document is subject to change without notice. Before using this document, please confirm

that this is the latest version.

Date Published: June 28, 2005

中文翻译

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与UPA810T_09相关器件

型号	品牌	获取价格	描述	数据表
UPA810T_V1	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
UPA810T-A	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
UPA810TC	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA
UPA810TC-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic
UPA810TC-FB	RENESAS	获取价格	2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPER MINIMOLD PACKAGE-6
UPA810TC-FB	NEC	获取价格	暂无描述
UPA810TC-FB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic
UPA810TC-T1	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA
UPA810TC-T1	RENESAS	获取价格	2 CHANNEL, UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPER MINIMOLD PACKAGE-6
UPA810TC-T1-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic

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