Datasheet > UPA809T_99

UPA809T_99

更新时间： 2024-02-10 03:58:56

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
5页	38K
描述
NPN SILICON HIGH FREQUENCY TRANSISTOR

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中文翻译

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数据手册

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UPA809T_99 数据手册

NPN SILICON HIGH

FREQUENCY TRANSISTOR

UPA809T

FEATURES

OUTLINE DIMENSIONS (Units in mm)

•

SMALL PACKAGE STYLE:

2 NE688 Die in a 2 mm x 1.25 mm package

PACKAGE OUTLINE S06

(Top View)

2.1 ± 0.1

•

LOW NOISE FIGURE:

NF = 1.5 dB TYP at 2 GHz

1.25 ± 0.1

•

HIGH GAIN BANDWIDTH: fT = 9 GHz

HIGH COLLECTOR CURRENT: 100 mA

0.65

DESCRIPTION

2.0 ± 0.2

0.2 (All Leads)

The UPA809T is two NPN high frequency silicon epitaxial

transistors encapsulated in an ultra small 6 pin SMT package.

Each transistor is independently mounted and easily config-

ured for either dual transistor or cascode operation. The high

fT, low voltage bias and small size make this device suited for

various hand-held wireless applications.

1.3

ABSOLUTE MAXIMUM RATINGS¹(TA = 25°C)

0.9 ± 0.1

SYMBOLS

VCBO

VCEO

VEBO

PARAMETERS

UNITS

RATINGS

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

0.7

+0.10

- 0.05

0.15

0 ~ 0.1

100

Total Power Dissipation

PIN OUT

1 Die

2 Die

110

200

1. Collector Transistor 1

2. Emitter Transistor 1

3. Collector Transistor 2

4. Emitter Transistor 2

5. Base Transistor 2

6. Base Transistor 1

TSTG

Junction Temperature

Storage Temperature

°C

150

-65 to +150

Note:

1. Operation in excess of any one of these parameters may result

in permanent damage.

Note:

Pin 3 is identified with a circle on the bottom of the package.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

UPA809T

S06

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

ICBO

IEBO

Collector Cutoff Current at VCB = 5V, IE = 0

µA

0.1

Emitter Cutoff Current at VEB = 1 V, IC = 0

hFE

Forward Current Gain at VCE = 1 V, IC = 3 mA

Gain Bandwidth at VCE = 3 V, IC = 20 mA, f = 2 GHz

Feedback Capacitance at VCB = 1 V, IE = 0, f = 1 MHz

Insertion Power Gain at VCE = 3 V, IC =20 mA, f = 2 GHz

Noise Figure at VCE = 3 V, IC = 7 mA, f = 2 GHz

110

9.0

160

GHz

Cre²

|S21E|²

0.75

6.5

0.85

1.5

hFE1 = Smaller Value of Q1, or Q2

hFE2 = Larger Value of Q1 or Q2

hFE1/hFE2

hFE Ratio:

0.85

Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.

For Tape and Reel version use part number UPA809T-T1, 3K per reel.

California Eastern Laboratories

12 3 4 5

中文翻译

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与UPA809T_99相关器件

型号	品牌	获取价格	描述	数据表
UPA809T-A	NEC	获取价格	暂无描述
UPA809TF	NEC	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
UPA809TF-T1	NEC	获取价格	BJT
UPA809T-KB	NEC	获取价格	暂无描述
UPA809T-KB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD P
UPA809T-T1	NEC	获取价格	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MI
UPA809T-T1-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, SO-6
UPA809T-T1KB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD P
UPA809T-T1KB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD P
UPA80C	NEC	获取价格	TRANSISTOR ARRAY

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