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UPA810TC-T1FB-A

更新时间： 2024-10-30 19:54:47
品牌 Logo 应用领域
日电电子 - NEC 放大器ISM频段光电二极管晶体管
页数 文件大小 规格书
12页 53K
描述
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-6

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UPA810TC-T1FB-A 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：ULTRA SUPER MINIMOLD PACKAGE-6Reach Compliance Code：compliant
风险等级：5.59其他特性：LOW NOISE
最大集电极电流 (IC)：0.1 A基于收集器的最大容量：1.5 pF
集电极-发射极最大电压：12 V配置：SEPARATE, 2 ELEMENTS
最高频带：ULTRA HIGH FREQUENCY BANDJESD-30 代码：R-PDSO-F6
JESD-609代码：e6湿度敏感等级：1
元件数量：2端子数量：6
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：260
极性/信道类型：NPN认证状态：Not Qualified
表面贴装：YES端子面层：TIN BISMUTH
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：10晶体管应用：AMPLIFIER
晶体管元件材料：SILICON标称过渡频率 (fT)：4500 MHz
Base Number Matches：1

UPA810TC-T1FB-A 数据手册

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DATA SHEET  
NPN SILICON RF TWIN TRANSISTOR  
µPA810TC  
NPN SILICON EPITAXIAL TRANSISTOR  
(WITH BUILT-IN 2 × 2SC5006)  
FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD  
DESCRIPTION  
The µPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band  
to the UHF band.  
FEATURES  
•
•
•
•
Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA  
High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA  
Flat-lead 6-pin thin-type ultra super minimold  
Built-in 2 transistors (2 × 2SC5006)  
ORDERING INFORMATION  
Part Number  
Package  
Quantity  
Supplying Form  
µPA810TC  
Flat-lead 6-pin  
thin-type ultra  
super minimold  
Loose products  
(50 pcs)  
Embossed tape 8 mm wide.  
Pin 6 (Q1 Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter) face to  
perforation side of the tape  
.
µPA810TC-T1  
Taping products  
(3 kp/reel)  
Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:  
µPA810TC. Unit sample quantity is 50 pcs.)  
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)  
Parameter  
Symbol  
VCBO  
Ratings  
20  
Unit  
V
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
VCEO  
12  
V
VEBO  
3
V
IC  
100  
mA  
mW  
PTNote  
Total Power Dissipation  
200 in 1 element  
230 in 2 elements  
Junction Temperature  
Storage Temperature  
Tj  
150  
˚C  
˚C  
Tstg  
–65 to +150  
Note Mounted on 1.08 cm2 × 1.0 mm glass epoxy substrate.  
Caution Electro-static sensitive devices  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for availability  
and additional information.  
Document No. P14550EJ1V0DS00 (1st edition)  
Date Published November 1999 N CP(K)  
Printed in Japan  
1999  
©
1234567...12

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