是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | SO-6 | Reach Compliance Code: | compliant |
风险等级: | 5.75 | Is Samacsys: | N |
其他特性: | LOW NOISE | 最大集电极电流 (IC): | 0.1 A |
基于收集器的最大容量: | 0.85 pF | 集电极-发射极最大电压: | 6 V |
配置: | SEPARATE, 2 ELEMENTS | 最高频带: | L BAND |
JESD-30 代码: | R-PDSO-G6 | JESD-609代码: | e0 |
元件数量: | 2 | 端子数量: | 6 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 9000 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA809T-T1-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, SO-6 |
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UPA809T-T1KB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD P |
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UPA809T-T1KB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD P |
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UPA80C | NEC |
获取价格 |
TRANSISTOR ARRAY |
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UPA80C-A | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,DIP |
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UPA81 | ETC |
获取价格 |
UPA81C Data Sheet | Data Sheet[02/1982] |
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UPA810 | NEC |
获取价格 |
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA |
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UPA810T | CEL |
获取价格 |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
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UPA810T | RENESAS |
获取价格 |
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR |
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UPA810T | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic |
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