生命周期: | Obsolete | Reach Compliance Code: | compliant |
风险等级: | 5.84 | 最大集电极电流 (IC): | 0.1 A |
最小直流电流增益 (hFE): | 70 | 最高工作温度: | 150 °C |
极性/信道类型: | NPN | 最大功率耗散 (Abs): | 0.2 W |
子类别: | Other Transistors | 表面贴装: | YES |
标称过渡频率 (fT): | 3000 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA810TF-T1 | NEC |
获取价格 |
BJT | |
UPA810T-GB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic | |
UPA810T-GB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic | |
UPA810TGB-T1 | RENESAS |
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TRANSISTOR,BJT,PAIR,NPN,12V V(BR)CEO,100MA I(C),TSOP | |
UPA810T-T1 | RENESAS |
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HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR | |
UPA810T-T1 | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic | |
UPA810T-T1 | CEL |
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NPN SILICON HIGH FREQUENCY TRANSISTOR | |
UPA810T-T1-A | CEL |
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NPN SILICON HIGH FREQUENCY TRANSISTOR | |
UPA810T-T1-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic | |
UPA810T-T1FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, Ultra High Frequency Band, Silic |