Datasheet > 晶体管 > 射频小信号双极晶体管> UPA809TF-T1

UPA809TF-T1

更新时间： 2024-01-16 12:59:42

品牌	Logo	应用领域
日电电子 - NEC		晶体小信号双极晶体管射频小信号双极晶体管光电二极管放大器
页数	文件大小	规格书
1页	18K
描述
BJT

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中文翻译

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技术参数
数据手册

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UPA809TF-T1 技术参数

生命周期：	Obsolete	包装说明：	2 X 1.25 MM, SOT-363, 6 PIN
Reach Compliance Code：	unknown	风险等级：	5.67
Is Samacsys：	N	最大集电极电流 (IC)：	0.1 A
基于收集器的最大容量：	0.85 pF	集电极-发射极最大电压：	6 V
配置：	SEPARATE, 2 ELEMENTS	最高频带：	L BAND
JESD-30 代码：	R-PDSO-G6	元件数量：	2
端子数量：	6	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	GULL WING
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	标称过渡频率 (fT)：	9000 MHz
Base Number Matches：	1

UPA809TF-T1 数据手册

NPN SILICON HIGH

FREQUENCY TRANSISTOR

UPA809TF

FEATURES

OUTLINE DIMENSIONS (Units in mm)

•

SMALL PACKAGE OUTLINE:

SOT-363 package measures just 2 mm x 1.25 mm

PACKAGE OUTLINE TS06

(Top View)

2.1 ± 0.1

LOW HEIGHT PROFILE:

Just 0.60 mm high

1.25 ± 0.1

HIGH COLLECTOR CURRENT:

IC MAX = 100 mA

0.65

+0.10

- 0.05

2.0 ± 0.2

DESCRIPTION

(All Leads)

0.22

1.3

The UPA809TF contains two NE688 NPN high frequency

siliconbipolarchips. NEC'snewlowprofileTFpackageisideal

for all portable wireless applicatons where reducing compo-

nent height is a prime consideration. Each transistor chip is

independently mounted and easily configured for two stage

cascade LNAs and other similar applications.

0.6 ± 0.1

0.45

ABSOLUTE MAXIMUM RATINGS¹(TA = 25°C)

0.13 ±0.05

SYMBOLS

VCBO

VCEO

VEBO

PARAMETERS

UNITS

RATINGS

0 ~ 0.1

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Note:

PIN OUT

Pin 1 is the lower left most pin as

the package lettering is oriented

and read left to right.

1. Collector Transistor 1

2. Emitter Transistor 1

3. Collector Transistor 2

4. Emitter Transistor 2

5. Base Transistor 2

6. Base Transistor 1

100

Total Power Dissipation

1 Die

2 Die

110

200

Junction Temperature

Storage Temperature

°C

150

TSTG

-65 to +150

Note:

1. Operation in excess of any one of these parameters may result

in permanent damage.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

UPA809TF

PACKAGE OUTLINE

TS06

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

MAX

ICBO

IEBO

hFE

Collector Cutoff Current at VCB = 5V, IE = 0

µA

0.1

Emitter Cutoff Current at VEB = 1 V, IC = 0

Forward Current Gain¹at VCE = 1 V, IC = 3 mA

Gain Bandwidth at VCE = 3 V, IC = 20 mA, f = 2 GHz

Feedback Capacitance²at VCB = 1 V, IE = 0, f = 1 MHz

Insertion Power Gain at VCE = 3 V, IC =20 mA, f = 2 GHz

Noise Figure at VCE = 3 V, IC = 7 mA, f = 2 GHz

110

9.0

160

GHz

Cre

|S21E|²

0.75

6.5

0.85

1.5

hFE1 = Smaller Value of Q1, or Q2

hFE2 = Larger Value of Q1 or Q2

hFE1/hFE2

hFE Ratio:

0.85

Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. For Tape and Reel version use

part number UPA809TF-T1, 3K per reel.

California Eastern Laboratories

EXCLUSIVE NORTH AMERICAN AGENT FOR

RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS

CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279

24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM

2/99

DATA SUBJECT TO CHANGE WITHOUT NOTICE

中文翻译

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与UPA809TF-T1相关器件

型号	品牌	获取价格	描述	数据表
UPA809T-KB	NEC	获取价格	暂无描述
UPA809T-KB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD P
UPA809T-T1	NEC	获取价格	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MI
UPA809T-T1-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, SO-6
UPA809T-T1KB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD P
UPA809T-T1KB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD P
UPA80C	NEC	获取价格	TRANSISTOR ARRAY
UPA80C-A	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,DIP
UPA81	ETC	获取价格	UPA81C Data Sheet \| Data Sheet[02/1982]
UPA810	NEC	获取价格	NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA

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