UPA809

更新时间： 2024-10-13 22:49:27

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器晶体管微波
页数	文件大小	规格书
10页	66K
描述
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

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中文翻译

获取价格

数据手册

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UPA809 数据手册

PRELIMINARY DATA SHEET

SILICON TRANSISTOR

µPA809T

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

(WITH BUILT-IN 2 ELEMENTS) MINI MOLD

FEATURES

PACKAGE DRAWINGS

•

Low Voltage Operation, Low Phase Distortion

(Unit: m m )

Low Noise

2.1±0.1

NF = 1.5 dB TYP. @V^CE= 3 V, IC = 7 m A, f = 2 GHz

NF = 1.7 dB TYP. @V^CE= 1 V, IC = 3 m A, f = 2 GHz

Large Absolute Maxim um Collector Current

I^C= 100 m A

1.25±0.1

•

A Mini Mold Package Adopted

Built-in 2 Transistors (2 × 2SC5193)

ORDERING INFORMATION

PART NUMBER

QUANTITY

PACKING STYLE

µPA809T

Loose products

(50 PCS)

Em bossed tape 8 m m wide. Pin 6 (Q1

Base), Pin 5 (Q2 Base), Pin 4 (Q2 Em itter)

face to perforation side of the tape.

PIN CONFIGURATION (Top View )

µPA809T-T1

Taping products

(3 KPCS/Reel)

Rem ark If you require an evaluation sam ple, please contact an NEC

Sales Representative. (Unit sam ple quantity is 50 pcs.)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

PARAMETER

SYMBOL

VCBO

VCEO

VEBO

RATING

UNIT

PIN CONNECTIONS

1. Collector (Q1)

2. Emitter (Q1)

4. Emitter (Q2)

5. Base (Q2)

6. Base (Q1)

Collector to Base Voltage

Collector to Em itter Voltage

Em itter to Base Voltage

Collector Current

3. Collector (Q2)

100

m A

m W

Total Power Dissipation

150 in 1 elem ent

200 in 2 elem ents

Note

J unction Tem perature

Storage Tem perature

150

˚C

Tstg

–65 to +150

Note 110 m W m ust not be exceeded in 1 elem ent.

This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.

The inform ation in this docum ent is subject to change w ithout notice.

Document No. ID-3643

(O.D. No. ID-9150)

Date Published April 1995 P

Printed in Japan

1995

12 3 4 5 6 7...10

中文翻译

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UPA809T	NEC	获取价格	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MI
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UPA809T-KB	NEC	获取价格	暂无描述
UPA809T-KB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD P
UPA809T-T1	NEC	获取价格	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MI
UPA809T-T1-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, SO-6
UPA809T-T1KB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD P