是否Rohs认证: | 不符合 | 生命周期: | Transferred |
Reach Compliance Code: | compliant | 风险等级: | 5.75 |
Is Samacsys: | N | 其他特性: | LOW NOISE |
最大集电极电流 (IC): | 0.1 A | 配置: | SEPARATE, 2 ELEMENTS |
最高频带: | L BAND | JESD-30 代码: | R-PDSO-G6 |
JESD-609代码: | e0 | 元件数量: | 2 |
端子数量: | 6 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN LEAD | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 9000 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA809T_99 | NEC |
获取价格 |
NPN SILICON HIGH FREQUENCY TRANSISTOR | |
UPA809T-A | NEC |
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暂无描述 | |
UPA809TF | NEC |
获取价格 |
NPN SILICON HIGH FREQUENCY TRANSISTOR | |
UPA809TF-T1 | NEC |
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BJT | |
UPA809T-KB | NEC |
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暂无描述 | |
UPA809T-KB-A | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD P | |
UPA809T-T1 | NEC |
获取价格 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MI | |
UPA809T-T1-A | NEC |
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RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, SO-6 | |
UPA809T-T1KB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD P | |
UPA809T-T1KB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD P |