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UPA808TC-T1FB PDF预览

UPA808TC-T1FB

更新时间: 2024-09-09 14:36:31
品牌 Logo 应用领域
日电电子 - NEC 光电二极管晶体管
页数 文件大小 规格书
16页 90K
描述
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, ULTRA SUPER MINIMOLD PACKAGE-6

UPA808TC-T1FB 技术参数

是否Rohs认证: 不符合生命周期:Transferred
包装说明:ULTRA SUPER MINIMOLD PACKAGE-6Reach Compliance Code:compliant
风险等级:5.71最大集电极电流 (IC):0.03 A
基于收集器的最大容量:0.8 pF集电极-发射极最大电压:3 V
配置:SEPARATE, 2 ELEMENTS最高频带:L BAND
JESD-30 代码:R-PDSO-F6JESD-609代码:e0
元件数量:2端子数量:6
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子面层:TIN LEAD
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管元件材料:SILICON
标称过渡频率 (fT):11000 MHzBase Number Matches:1

UPA808TC-T1FB 数据手册

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DATA SHEET  
NPN SILICON RF TWIN TRANSISTOR  
µPA808TC  
NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)  
IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD  
FEATURES  
Built-in high-gain transistor  
fT = 9.0 GHz TYP., S21e 2 = 7.5 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz  
Built-in 2 transistors (2 × 2SC5436)  
Flat-lead 6-pin thin-type ultra super minimold package  
BUILT-IN TRANSISTORS  
Q1, Q2  
3-pin thin-type ultra super minimold part No.  
2SC5436  
ORDERING INFORMATION  
Part Number  
Quantity  
50 pcs (Non reel)  
3 kpcs/reel  
Supplying Form  
µPA808TC  
µPA808TC-T1  
• 8 mm wide embossed taping  
• Pin 6 (Q1 Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)  
face the perforation side of the tape  
Remark To order evaluation samples, contact your nearby sales office.  
The unit sample quantity is 50 pcs.  
Because this product uses high-frequency technology, avoid excessive static electricity, etc.  
The information in this document is subject to change without notice. Before using this document, please confirm that  
this is the latest version.  
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices  
representative for availability and additional information.  
Document No. PU10130EJ01V0DS (1st edition)  
Date Published April 2002 CP(K)  
Printed in Japan  
NEC Compound Semiconductor Devices 2002  

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