Datasheet > UPA808T-T1-A

UPA808T-T1-A

更新时间： 2024-09-09 03:57:03

品牌	Logo	应用领域
CEL		晶体晶体管光电二极管 ISM频段放大器
页数	文件大小	规格书
10页	188K
描述
NPN SILICON HIGH FREQUENCY TRANSISTOR

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

UPA808T-T1-A 数据手册

NPN SILICON HIGH

FREQUENCY TRANSISTOR

UPA808T

FEATURES

OUTLINE DIMENSIONS (Units in mm)

•

SMALL PACKAGE STYLE:

2 NE687 Die in a 2 mm x 1.25 mm package

PACKAGE OUTLINE S06

(Top View)

LOW NOISE FIGURE:

NF = 1.3 dB TYP at 2 GHz

2.1 ± 0.1

HIGH GAIN:

|S21E|²= 8.5 dB TYP at 2 GHz

1.25 ± 0.1

LOW CURRENT OPERATION

0.65

DESCRIPTION

2.0 ± 0.2

0.2 (All Leads)

NEC's UPA808T is two NPN high frequency silicon epitaxial

transistors encapsulated in an ultra small 6 pin SMT package.

Each transistor is independently mounted and easily config-

ured for either dual transistor or cascode operation. The high

fT, low voltage bias and small size make this device suited for

various hand-held wireless applications.

1.3

0.9 ± 0.1

0.7

+0.10

- 0.05

0.15

0 ~ 0.1

PIN OUT

1. Collector Transistor 1

2. Emitter Transistor 1

3. Collector Transistor 2

4. Emitter Transistor 2

5. Base Transistor 2

6. Base Transistor 1

Note:

Pin 3 is identified with a circle on the bottom of the package.

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER

PACKAGE OUTLINE

UPA808T

S06

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

µA

MIN

TYP

MAX

ICBO

IEBO

Collector Cutoff Current at VCB = 5 V, IE = 0

0.1

Emitter Cutoff Current at VEB = 1 V, IC = 0

µA

hFE

Forward Current Gain at VCE = 2 V, IC = 20 mA

Gain Bandwidth at VCE = 2 V, IC = 20 mA, f = 2 GHz

Feedback Capacitance at VCB = 2 V, IE = 0, f = 1 MHz

Insertion Power Gain at VCE = 2 V, IC =20 mA, f = 2 GHz

Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 GHz

100

140

GHz

Cre²

|S21E|²

0.4

8.5

1.3

0.8

hFE1 = Smaller Value of Q1, or Q2

hFE2 = Larger Value of Q1 or Q2

hFE1/hFE2

hFE Ratio:

0.85

Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.

For Tape and Reel version use part number UPA808T-T1, 3K per reel.

California Eastern Laboratories

12 3 4 5 6 7...10

中文翻译

下载PDF

与UPA808T-T1-A相关器件

型号	品牌	获取价格	描述	数据表
UPA808T-T1KB	NEC	获取价格	暂无描述
UPA808T-T1KB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, PLASTIC,
UPA809	NEC	获取价格	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MI
UPA809T	NEC	获取价格	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MI
UPA809T_99	NEC	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
UPA809T-A	NEC	获取价格	暂无描述
UPA809TF	NEC	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
UPA809TF-T1	NEC	获取价格	BJT
UPA809T-KB	NEC	获取价格	暂无描述
UPA809T-KB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, L Band, Silicon, NPN, MINIMOLD P