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UPA808TC-A

更新时间： 2024-09-09 21:22:23
品牌 Logo 应用领域
日电电子 - NEC 放大器ISM频段光电二极管晶体管
页数 文件大小 规格书
1页 14K
描述
RF Small Signal Bipolar Transistor, 0.065A I(C), 2-Element, Ultra High Frequency Band, Silicon, NPN

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UPA808TC-A 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：SMALL OUTLINE, R-PDSO-F6Reach Compliance Code：compliant
ECCN代码：EAR99风险等级：5.25
最大集电极电流 (IC)：0.065 A基于收集器的最大容量：0.8 pF
集电极-发射极最大电压：10 V配置：SEPARATE, 2 ELEMENTS
最高频带：ULTRA HIGH FREQUENCY BANDJESD-30 代码：R-PDSO-F6
JESD-609代码：e6元件数量：2
端子数量：6封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：NPN
认证状态：Not Qualified表面贴装：YES
端子面层：TIN BISMUTH端子形式：FLAT
端子位置：DUAL处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：AMPLIFIER晶体管元件材料：SILICON
标称过渡频率 (fT)：11000 MHzBase Number Matches：1

UPA808TC-A 数据手册

  
PRELIMINARY DATA SHEET  
NPN SILICON HIGH  
FREQUENCY TRANSISTOR  
UPA808TC  
FEATURES  
DESCRIPTION  
•
SMALL PACKAGE OUTLINE:  
1.5 mm x 1.1 mm, 33% smaller than conventional  
SOT-363 package  
The UPA808TC contains two NE687 NPN high frequency  
silicon bipolar chips. NEC's new ultra small TC package is  
ideal for all portable wireless applications where reducing  
board space is a prime consideration. Each transistor chip is  
independently mounted and easily configured for two stage  
cascode LNAs and other applications.  
•
•
LOW HEIGHT PROFILE  
Just 0.55 mm high  
FLAT LEAD STYLE:  
Reduced lead inductance improves electrical  
performance  
•
HIGH COLLECTOR CURRENT:  
IC MAX = 65 mA  
OUTLINE DIMENSIONS (Units in mm)  
PACKAGE OUTLINE TC  
(Top View)  
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)  
1.50±0.1  
SYMBOLS  
VCBO  
VCEO  
VEBO  
IC  
PARAMETERS  
UNITS  
RATINGS  
1.10±0.1  
+0.1  
0.20  
-0.05  
Collector to Base Voltage  
Collector to Emitter Voltage  
Emitter to Base Voltage  
Collector Current  
V
V
20  
10  
1.5  
65  
PIN OUT  
V
1
6
1. Collector Q1  
2. Emitter Q1  
3. Collector Q2  
4. Emitter Q2  
5. Base Q2  
1.50±0.1  
0.48  
0.48  
mA  
0.96  
PT  
Total Power Dissipation  
2
3
5
4
1 Die  
2 Die  
mW  
mW  
TBD  
TBD  
6. Base Q1  
TJ  
Junction Temperature  
Storage Temperature  
°C  
°C  
150  
TSTG  
-65 to +150  
+0.1  
0.11  
-0.05  
0.55±0.05  
Note: 1. Operation in excess of any one of these parameters may  
result in permanent damage.  
ELECTRICAL CHARACTERISTICS (TA = 25°C)  
PART NUMBER  
PACKAGE OUTLINE  
UPA808TC  
TC  
SYMBOLS  
PARAMETERS AND CONDITIONS  
UNITS  
MIN  
TYP  
MAX  
ICBO  
IEBO  
hFE  
Collector Cutoff Current at VCB = 10 V, IE = 0  
Emitter Cutoff Current at VEB = 1 V, IC = 0  
Forward Current Gain1 at VCE = 3 V, IC = 7 mA  
µA  
µA  
0.1  
0.1  
70  
9
100  
11  
140  
fT  
Gain Bandwidth at VCE = 3 V, IC = 7 mA  
GHz  
pF  
Cre  
|S21E|2  
NF  
Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz  
Insertion Power Gain at VCE = 3 V, IC = 7 mA, f = 1 GHz  
Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz  
0.4  
8.5  
1.3  
0.8  
2
dB  
7
dB  
Notes: 1.Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.  
2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.  
For Tape and Reel version use part number UPA808TC-T1, 3K per reel.  
California Eastern Laboratories  
EXCLUSIVE NORTH AMERICAN AGENT FOR  
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS  
CALIFORNIA EASTERN LABORATORIES ¥ Headquarters ¥ 4590 Patrick Henry Drive ¥ Santa Clara, CA 95054-1817 ¥ (408) 988-3500 ¥ Telex 34-6393 ¥ FAX (408) 988-027  
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) ¥ Internet: http://WWW.CEL.COM  
04/27/2001  
DATA SUBJECT TO CHANGE WITHOUT NOTICE  
1

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