是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | SMALL OUTLINE, R-PDSO-F6 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.25 |
最大集电极电流 (IC): | 0.065 A | 基于收集器的最大容量: | 0.8 pF |
集电极-发射极最大电压: | 10 V | 配置: | SEPARATE, 2 ELEMENTS |
最高频带: | ULTRA HIGH FREQUENCY BAND | JESD-30 代码: | R-PDSO-F6 |
JESD-609代码: | e6 | 元件数量: | 2 |
端子数量: | 6 | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | TIN BISMUTH | 端子形式: | FLAT |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | AMPLIFIER | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 11000 MHz | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA808TC-FB | NEC |
获取价格 |
2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, ULTRA SUPER MINIMOLD PACKAGE-6 |
![]() |
UPA808TC-FB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, ULTRA SUP |
![]() |
UPA808TC-T1 | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.065A I(C), 2-Element, Ultra High Frequency Band, Sil |
![]() |
UPA808TC-T1FB | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, ULTRA SUP |
![]() |
UPA808TC-T1FB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, ULTRA SUP |
![]() |
UPA808T-T1 | NEC |
获取价格 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SU |
![]() |
UPA808T-T1-A | CEL |
获取价格 |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
![]() |
UPA808T-T1KB | NEC |
获取价格 |
暂无描述 |
![]() |
UPA808T-T1KB-A | NEC |
获取价格 |
RF Small Signal Bipolar Transistor, 0.03A I(C), 2-Element, L Band, Silicon, NPN, PLASTIC, |
![]() |
UPA809 | NEC |
获取价格 |
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MI |
![]() |