UPA807

更新时间： 2024-09-08 22:49:27

品牌	Logo	应用领域
日电电子 - NEC		晶体放大器晶体管微波
页数	文件大小	规格书
8页	59K
描述
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD

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中文翻译

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数据手册

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UPA807 数据手册

DATA SHEET

SILICON TRANSISTOR

µPA807T

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

(WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD

PACKAGE DRAWINGS

(Unit: mm)

FEATURES

•

Low Current, High Gain

|S^21e|²= 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz

|S21e|²= 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz

A Super Mini Mold Package Adopted

2.1±0.1

1.25±0.1

•

Built-in 2 Transistors (2 × 2SC5179)

ORDERING INFORMATION

PART NUMBER

QUANTITY

PACKING STYLE

µPA807T

Loose products

(50 PCS)

Embossed tape 8 mm wide. Pin 6

(Q1 Base), Pin 5 (Q2 Base), Pin 4

(Q2 Emitter) face to perforation

side of the tape.

µPA807T-T1

Taping products

(3 KPCS/Reel)

Remark If you require an evaluation sample, please contact an

NEC Sales Representative. (Unit sample quantity is 50

pcs.)

PIN CONFIGURATION (Top View)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

PARAMETER

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

SYMBOL

VCBO

VCEO

VEBO

RATING

UNIT

Total Power Dissipation

30 in 1 element

60 in 2 elements

Junction Temperature

Storage Temperature

150

°C

Tstg

–65 to +150

PIN CONNECTIONS

1. Collector (Q1) 4. Emitter (Q2)

2. Emitter (Q1) 5. Base (Q2)

3. Collector (Q2) 6. Base (Q1)

This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.

Document No. P12153EJ2V0DS00 (2nd edition)

(Previous No. ID-3641)

Date Published November 1996 N

Printed in Japan

1995

1994

12 3 4 5 6 7 8

中文翻译

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与UPA807相关器件

型号	品牌	获取价格	描述	数据表
UPA807T	NEC	获取价格	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SU
UPA807T	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
UPA807T-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.01A I(C), 2-Element, S Band, Silicon, NPN,
UPA807T-KB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.01A I(C), 2-Element, L Band, Silicon, NPN, PLASTIC,
UPA807T-KB-A	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.01A I(C), 2-Element, L Band, Silicon, NPN, PLASTIC,
UPA807T-T1	NEC	获取价格	MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SU
UPA807T-T1	RENESAS	获取价格	RF SMALL SIGNAL TRANSISTOR
UPA807T-T1-A	CEL	获取价格	NPN SILICON HIGH FREQUENCY TRANSISTOR
UPA807T-T1KB	RENESAS	获取价格	2 CHANNEL, L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, SUPERMINI-6
UPA807T-T1KB	NEC	获取价格	RF Small Signal Bipolar Transistor, 0.01A I(C), 2-Element, L Band, Silicon, NPN, PLASTIC,