Datasheet > UPA2723UT1A-E2-AY

UPA2723UT1A-E2-AY

更新时间： 2024-09-17 08:41:59

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
6页	171K
描述
Power Field-Effect Transistor, 33A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HVSON-8

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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

μPA2723UT1A

SWITCHING

N-CHANNEL POWER MOSFET

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The μ PA2723UT1A is N-channel MOSFET designed for low side device

of synchronous rectifier DC/DC converter.

FEATURES

• Low on-state resistance

0.2

0.10 S

R^DS(on)1= 2.5 mΩ MAX. (VGS = 10 V, ID = 17 A)

R^DS(on)2= 3.5 mΩ MAX. (VGS = 4.5 V, ID = 17 A)

• Thin type surface mount package with heat spreader (8-pin HVSON)

• RoHS Compliant

5.4 0.2

ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)

0.2

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC)

VDSS

VGSS

I^D(DC)

I^D(pulse)

P^T1

1, 2, 3 : Source

: Gate

5, 6, 7, 8: Drain

Drain Current (pulse) ^Note1

200

Total Power Dissipation ^Note2

Total Power Dissipation (PW =10 sec) ^Note2

Channel Temperature

3.65 0.2

0.6 0.15

1.5

°C

0.7 0.15

P^T2

4.6

T^ch

150

Storage Temperature

T^stg

−55 to +150

Single Avalanche Current ^Note3

Single Avalanche Energy ^Note3

I^AS

EQUIVALENT CIRCUIT

E^AS

109

Drain

THERMAL RESISTANCE

Channel to Ambient Thermal Resistance ^Note2

Body

Diode

R^th(ch-A)

R^th(ch-C)

83.3

1.5

°C/W

Gate

Channel to Case (Drain) Thermal Resistance

Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%

Source

2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm

3. Starting T^ch= 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade

the device operation. Steps must be taken to stop generation of static electricity as much as possible, and

quickly dissipate it once, when it has occurred.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

2007

Document No. G17954EJ1V0DS00 (1st edition)

Date Published April 2007 NS CP(K)

Printed in Japan

12 3 4 5 6

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与UPA2723UT1A-E2-AY相关器件

型号	品牌	获取价格	描述	数据表
UPA2723UT1A-E2-AZ	NEC	获取价格	Power Field-Effect Transistor, 33A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Me
UPA2725T1A-E1-AY	NEC	获取价格	Power Field-Effect Transistor, 25A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Me
UPA2725T1A-E1-AZ	NEC	获取价格	Switching N-Channel Power MOSFET, HVSON, /Embossed Tape
UPA2725T1A-E2-AY	NEC	获取价格	Power Field-Effect Transistor, 25A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Me
UPA2725UT1A-E1-AY	RENESAS	获取价格	UPA2725UT1A-E1-AY
UPA2725UT1A-E1-AZ	RENESAS	获取价格	UPA2725UT1A-E1-AZ
UPA2725UT1A-E2-AZ	RENESAS	获取价格	UPA2725UT1A-E2-AZ
UPA2727T1A-E1-AY	NEC	获取价格	Power Field-Effect Transistor, 16A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Met
UPA2727T1A-E1-AZ	NEC	获取价格	Power Field-Effect Transistor, 16A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Met
UPA2727T1A-E2-AY	NEC	获取价格	Power Field-Effect Transistor, 16A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Met

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