是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | , | Reach Compliance Code: | compliant |
风险等级: | 5.84 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 42 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 40 W |
子类别: | Other Transistors | 表面贴装: | YES |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA2730TP-E2-AZ | RENESAS |
获取价格 |
Switching N-Channel Power MOSFET, HSOP, /Embossed Tape | |
UPA2731UT1A-E1-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 44A I(D), 30V, 0.0064ohm, 1-Element, P-Channel, Silicon, Me | |
UPA2731UT1A-E2-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 44A I(D), 30V, 0.0064ohm, 1-Element, P-Channel, Silicon, Me | |
UPA2732T1A-E1-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 30V, 0.0067ohm, 1-Element, P-Channel, Silicon, Me | |
UPA2732UT1A-E1-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 30V, 0.0067ohm, 1-Element, P-Channel, Silicon, Me | |
UPA2732UT1A-E2-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 30V, 0.0067ohm, 1-Element, P-Channel, Silicon, Me | |
UPA2734GR-E2-AT | NEC |
获取价格 |
Power Field-Effect Transistor, 7A I(D), 30V, 0.038ohm, 1-Element, P-Channel, Silicon, Meta | |
UPA2735GR | RENESAS |
获取价格 |
P-channel MOSFET -30 V, -16 A, 5.0 m | |
UPA2735GR-E1-AT | RENESAS |
获取价格 |
P-channel MOSFET -30 V, -16 A, 5.0 m | |
UPA2735GR-E2-AT | RENESAS |
获取价格 |
P-channel MOSFET -30 V, -16 A, 5.0 m |