Datasheet > UPA2727T1A-E1-AZ

UPA2727T1A-E1-AZ

更新时间： 2024-09-17 10:34:15

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
6页	176K
描述
Power Field-Effect Transistor, 16A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HVSON-8

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UPA2727T1A-E1-AZ 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

μPA2727T1A

SWITCHING

N-CHANNEL POWER MOSFET

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The μ PA2727T1A is N-channel MOSFET designed for DC/DC converter applications.

FEATURES

• Low on-state resistance

R^DS(on)1= 9.6 mΩ MAX. (VGS = 10 V, ID = 8 A)

R^DS(on)2= 15 mΩ MAX. (VGS = 4.5 V, ID = 8 A)

• Low Q^GD

0.2

0.10 S

5.4 0.2

Q^GD= 3.5 nC TYP. (VDD = 15 V, ID = 16 A)

• Built-in gate protection diode

• Thin type surface mount package with heat spreader (8-pin HVSON)

• RoHS Compliant

0.2

ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)

1, 2, 3 : Source

: Gate

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC)

VDSS

VGSS

I^D(DC)

I^D(pulse)

P^T1

5, 6, 7, 8: Drain

3.65 0.2

0.6 0.15

Drain Current (pulse) ^Note1

0.7 0.15

Total Power Dissipation ^Note2

Total Power Dissipation (PW =10 sec) ^Note2

Channel Temperature

1.5

°C

P^T2

4.6

150

T^ch

EQUIVALENT CIRCUIT

Storage Temperature

T^stg

−55 to +150

Single Avalanche Current ^Note3

Single Avalanche Energy ^Note3

IAS

Drain

E^AS

Body

Diode

Gate

THERMAL RESISTANCE

Channel to Ambient Thermal Resistance ^Note2

R^th(ch-A)

R^th(ch-C)

83.3

2.0

°C/W

Gate

Protection

Diode

Channel to Case (Drain) Thermal Resistance

Source

Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%

2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm

3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

2007

Document No. G18630EJ2V0DS00 (2nd edition)

Date Published April 2007 NS CP(K)

Printed in Japan

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

12 3 4 5 6

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与UPA2727T1A-E1-AZ相关器件

型号	品牌	获取价格	描述	数据表
UPA2727T1A-E2-AY	NEC	获取价格	Power Field-Effect Transistor, 16A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Met
UPA2727UT1A	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2727UT1A-E1-AY	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2727UT1A-E1-AZ	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2727UT1A-E2-AY	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2727UT1A-E2-AY	RENESAS	获取价格	POWER, FET
UPA2727UT1A-E2-AZ	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2728GR	NEC	获取价格	Power Field-Effect Transistor, 13A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Met
UPA2728GR-E1-A	NEC	获取价格	Power Field-Effect Transistor, 13A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Met
UPA2728GR-E2-A	NEC	获取价格	Power Field-Effect Transistor, 13A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Met

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