是否Rohs认证: | 不符合 | 生命周期: | Transferred |
包装说明: | HVSON-8 | Reach Compliance Code: | compliant |
风险等级: | 5.8 | Is Samacsys: | N |
雪崩能效等级(Eas): | 26 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 30 V | 最大漏极电流 (ID): | 16 A |
最大漏源导通电阻: | 0.015 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-F8 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 96 A | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | FLAT | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA2727UT1A-E1-AY | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
UPA2727UT1A-E1-AZ | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
UPA2727UT1A-E2-AY | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
UPA2727UT1A-E2-AY | RENESAS |
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POWER, FET | |
UPA2727UT1A-E2-AZ | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
UPA2728GR | NEC |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Met | |
UPA2728GR-E1-A | NEC |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Met | |
UPA2728GR-E2-A | NEC |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Met | |
UPA2728GR-E2-AT | NEC |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Met | |
UPA2730 | ETC |
获取价格 |
UPA2730TP Data Sheet | Data Sheet[11/2002] |