UPA2727UT1A-E1-AZ

更新时间： 2024-09-16 03:09:51

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
6页	173K
描述
MOS FIELD EFFECT TRANSISTOR

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中文翻译

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数据手册

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DATA SHEET

MOS FIELD EFFECT TRANSISTOR

μPA2727UT1A

SWITCHING

N-CHANNEL POWER MOSFET

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The μ PA2727UT1A is N-channel MOSFET designed for DC/DC converter applications.

FEATURES

• Low on-state resistance

R^DS(on)1= 9.6 mΩ MAX. (VGS = 10 V, ID = 8 A)

R^DS(on)2= 15 mΩ MAX. (VGS = 4.5 V, ID = 8 A)

• Low Q^GD

0.2

0.10 S

5.4 0.2

Q^GD= 3.5 nC TYP. (VDD = 15 V, ID = 16 A)

• Thin type surface mount package with heat spreader (8-pin HVSON)

• RoHS Compliant

0.2

ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC)

VDSS

VGSS

I^D(DC)

I^D(pulse)

P^T1

1, 2, 3 : Source

: Gate

5, 6, 7, 8: Drain

Drain Current (pulse) ^Note1

3.65 0.2

0.6 0.15

Total Power Dissipation ^Note2

Total Power Dissipation (PW = 10 sec) ^Note2

Channel Temperature

1.5

°C

0.7 0.15

P^T2

4.6

150

T^ch

Storage Temperature

T^stg

−55 to +150

EQUIVALENT CIRCUIT

Single Avalanche Current ^Note3

Single Avalanche Energy ^Note3

I^AS

Drain

EAS

Body

Diode

THERMAL RESISTANCE

Gate

Channel to Ambient Thermal Resistance ^Note2

R^th(ch-A)

83.3

2.0

°C/W

Channel to Case (Drain) Thermal Resistance

Rth(ch-C)

Source

Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%

2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm

3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade

the device operation. Steps must be taken to stop generation of static electricity as much as possible, and

quickly dissipate it once, when it has occurred.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G18300EJ1V0DS00 (1st edition)

Date Published May 2007 NS CP(K)

Printed in Japan

2006, 2007

12 3 4 5 6

中文翻译

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与UPA2727UT1A-E1-AZ相关器件

型号	品牌	获取价格	描述	数据表
UPA2727UT1A-E2-AY	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2727UT1A-E2-AY	RENESAS	获取价格	POWER, FET
UPA2727UT1A-E2-AZ	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2728GR	NEC	获取价格	Power Field-Effect Transistor, 13A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Met
UPA2728GR-E1-A	NEC	获取价格	Power Field-Effect Transistor, 13A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Met
UPA2728GR-E2-A	NEC	获取价格	Power Field-Effect Transistor, 13A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Met
UPA2728GR-E2-AT	NEC	获取价格	Power Field-Effect Transistor, 13A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Met
UPA2730	ETC	获取价格	UPA2730TP Data Sheet \| Data Sheet[11/2002]
UPA2730TP	NEC	获取价格	SWITCHING P-CHANNEL POWER MOSFET
UPA2730TP-AZ	NEC	获取价格	Small Signal Field-Effect Transistor, 42A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-

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