Datasheet > UPA2728GR-E2-AT

UPA2728GR-E2-AT

更新时间： 2024-11-07 06:57:23

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
6页	163K
描述
Power Field-Effect Transistor, 13A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, POWER SOP-8

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UPA2728GR-E2-AT 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

μPA2728GR

SWITCHING

N-CHANNEL POWER MOS FET

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The μ PA2728GR is N-channel MOS Field Effect Transistor

designed for DC/DC converter and power management

applications of notebook computer.

1, 2, 3 : Source

: Gate

5, 6, 7, 8: Drain

FEATURES

• Low on-state resistance

R^DS(on)1= 10.5 mΩ MAX. (VGS = 10 V, ID = 7.0 A)

RDS(on)2 = 18 mΩ MAX. (VGS = 4.5 V, ID = 7.0 A)

• Low gate to drain charge

6.0 ±0.3

4.4

5.37 MAX.

0.8

Q^GD= 3.5 nC TYP. (VDD = 15 V, ID = 13 A)

• Built-in gate protection diode

• Small and surface mount package (Power SOP8)

• RoHS Compliant

0.5 ±0.2

0.10

1.27 0.78 MAX.

+0.10

0.40

0.12 M

–0.05

ORDERING INFORMATION

PART NUMBER

LEAD PLATING

Sn-Bi

PACKING

PACKAGE

μ PA2728GR-E1-A ^Note

μ PA2728GR-E2-A ^Note

μ PA2728GR-E1-AT ^Note

μ PA2728GR-E2-AT ^Note

Power SOP8

0.08 g TYP.

Tape 2500 p/reel

Pure Sn

Note Pb-free (This product does not contain Pb in external electrode and other parts).

ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)

EQUIVALENT CIRCUIT

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC)

VDSS

VGSS

I^D(DC)

I^D(pulse)

P^T1

Drain

Drain Current (pulse) ^Note1

Body

Diode

Gate

Total Power Dissipation ^Note2

Total Power Dissipation (PW = 10 sec) ^Note2

Channel Temperature

1.1

°C

P^T2

2.5

150

Gate

Protection

Diode

T^ch

Source

Storage Temperature

T^stg

−55 to +150

Single Avalanche Current ^Note3

Single Avalanche Energy ^Note3

I^AS

E^AS

Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%

2. Mounted on glass epoxy board of 1 inch²x 0.8 mm

3. Starting T^ch= 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G18295EJ1V0DS00 (1st edition)

Date Published March 2007 NS CP(K)

Printed in Japan

2006, 2007

12 3 4 5 6

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UPA2730	ETC	获取价格	UPA2730TP Data Sheet \| Data Sheet[11/2002]
UPA2730TP	NEC	获取价格	SWITCHING P-CHANNEL POWER MOSFET
UPA2730TP-AZ	NEC	获取价格	Small Signal Field-Effect Transistor, 42A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-
UPA2730TP-E1	RENESAS	获取价格	UPA2730TP-E1
UPA2730TP-E1-AY	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,42A I(D),SO
UPA2730TP-E1-AZ	RENESAS	获取价格	Switching N-Channel Power MOSFET, HSOP, /Embossed Tape
UPA2730TP-E2	RENESAS	获取价格	UPA2730TP-E2
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