是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | HSOP | 针数: | 8 |
Reach Compliance Code: | compliant | 风险等级: | 5.28 |
Is Samacsys: | N | 配置: | Single |
最大漏极电流 (Abs) (ID): | 42 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最高工作温度: | 150 °C | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | P-CHANNEL | 最大功率耗散 (Abs): | 40 W |
子类别: | Other Transistors | 表面贴装: | YES |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA2730TP-E2 | RENESAS |
获取价格 |
UPA2730TP-E2 | |
UPA2730TP-E2-AY | RENESAS |
获取价格 |
TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,42A I(D),SO | |
UPA2730TP-E2-AZ | RENESAS |
获取价格 |
Switching N-Channel Power MOSFET, HSOP, /Embossed Tape | |
UPA2731UT1A-E1-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 44A I(D), 30V, 0.0064ohm, 1-Element, P-Channel, Silicon, Me | |
UPA2731UT1A-E2-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 44A I(D), 30V, 0.0064ohm, 1-Element, P-Channel, Silicon, Me | |
UPA2732T1A-E1-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 30V, 0.0067ohm, 1-Element, P-Channel, Silicon, Me | |
UPA2732UT1A-E1-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 30V, 0.0067ohm, 1-Element, P-Channel, Silicon, Me | |
UPA2732UT1A-E2-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 40A I(D), 30V, 0.0067ohm, 1-Element, P-Channel, Silicon, Me | |
UPA2734GR-E2-AT | NEC |
获取价格 |
Power Field-Effect Transistor, 7A I(D), 30V, 0.038ohm, 1-Element, P-Channel, Silicon, Meta | |
UPA2735GR | RENESAS |
获取价格 |
P-channel MOSFET -30 V, -16 A, 5.0 m |