Datasheet > UPA2730

UPA2730

更新时间： 2024-09-15 23:39:35

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UPA2730TP Data Sheet \| Data Sheet[11/2002]

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中文翻译

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UPA2730 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

µPA2730TP

SWITCHING

P-CHANNEL POWER MOS FET

DESCRIPTION

PACKAGE DRAWING (Unit: mm)

The µPA2730TP which has a heat spreader is P-Channel

MOS Field Effect Transistor designed for power management

applications of notebook computers and Li-ion battery

protection circuit.

1, 2, 3

5, 6, 7, 8, 9 ; Drain

; Source

; Gate

FEATURES

• Low on-state resistance

6.0 ±0.3

0.8 ±0.2

4.4 ±0.15

+0.17

–0.2

5.2

R^DS(on)1= 7.0 mΩ MAX. (V^GS= –10 V, I^D= –7.5 A)

R^DS(on)2= 10.5 mΩ MAX. (V^GS= –4.5 V, I^D= –7.5 A)

R^DS(on)3= 12.0 mΩ MAX. (V^GS= –4.0 V, I^D= –7.5 A)

• Low C^iss: C^iss= 4670 pF TYP.

0.10

1.27 TYP.

+0.10

–0.05

0.40

0.12 M

• Small and surface mount package (Power HSOP8)

2.0 ±0.2

ORDERING INFORMATION

4.1 MAX.

PART NUMBER

PACKAGE

µPA2730TP

Power HSOP8

ABSOLUTE MAXIMUM RATINGS (T^A= 25°C, Unless otherwise noted, All terminals are connected.)

Drain to Source Voltage (V^GS= 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC) (T^C= 25°C)

Drain Current (DC) ^Note1

V^DSS

V^GSS

I^D(DC)1

I^D(DC)2

I^D(pulse)

P^T1

−30

m20

m42

m20

m120

EQUIVALENT CIRCUIT

Drain Current (pulse) ^Note2

Drain

Total Power Dissipation (T^C= 25°C)

Total Power Dissipation (T^A= 25°C) ^Note1

Channel Temperature

°C

P^T2

Body

T^ch

150

Diode

Gate

Storage Temperature

Tstg

−55 to + 150

−15

Single Avalanche Current ^Note3

Single Avalanche Energy ^Note3

I^AS

E^AS

22.5

Source

Notes 1. Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec

2. PW ≤ 10 µs, Duty Cycle ≤ 1%

3. Starting T^ch= 25°C, V^DD= –15 V, R^G= 25 Ω, L = 100 µH, V^GS= –20 → 0 V

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately

degrade the device operation. Steps must be taken to stop generation of static electricity as much as

possible, and quickly dissipate it once, when it has occurred.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with NEC Electronics sales

representative for availability and additional information.

Document No.

G15983EJ1V0DS00 (1st edition)

Date Published November 2002 NS CP(K)

Printed in Japan

2002

12 3 4 5 6 7 8

中文翻译

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与UPA2730相关器件

型号	品牌	获取价格	描述	数据表
UPA2730TP	NEC	获取价格	SWITCHING P-CHANNEL POWER MOSFET
UPA2730TP-AZ	NEC	获取价格	Small Signal Field-Effect Transistor, 42A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-
UPA2730TP-E1	RENESAS	获取价格	UPA2730TP-E1
UPA2730TP-E1-AY	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,42A I(D),SO
UPA2730TP-E1-AZ	RENESAS	获取价格	Switching N-Channel Power MOSFET, HSOP, /Embossed Tape
UPA2730TP-E2	RENESAS	获取价格	UPA2730TP-E2
UPA2730TP-E2-AY	RENESAS	获取价格	TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,42A I(D),SO
UPA2730TP-E2-AZ	RENESAS	获取价格	Switching N-Channel Power MOSFET, HSOP, /Embossed Tape
UPA2731UT1A-E1-AZ	NEC	获取价格	Power Field-Effect Transistor, 44A I(D), 30V, 0.0064ohm, 1-Element, P-Channel, Silicon, Me
UPA2731UT1A-E2-AZ	NEC	获取价格	Power Field-Effect Transistor, 44A I(D), 30V, 0.0064ohm, 1-Element, P-Channel, Silicon, Me

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