Datasheet > UPA2725T1A-E2-AY

UPA2725T1A-E2-AY

更新时间： 2024-09-17 09:08:31

品牌	Logo	应用领域
日电电子 - NEC		/
页数	文件大小	规格书
6页	173K
描述
Power Field-Effect Transistor, 25A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HVSON-8

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UPA2725T1A-E2-AY 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

μPA2725T1A

SWITCHING

N-CHANNEL POWER MOSFET

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The μ PA2725T1A is N-channel MOSFET designed for DC/DC converter applications.

FEATURES

• Low on-state resistance

R^DS(on)1= 5.0 mΩ MAX. (VGS = 10 V, ID = 13 A)

R^DS(on)2= 7.5 mΩ MAX. (VGS = 4.5 V, ID = 13 A)

• Low input capacitance

0.2

0.10 S

5.4 0.2

Ciss = 2580 pF TYP. (VDS = 15 V, VGS = 0 V)

• Built-in gate protection diode

• Thin type surface mount package with heat spreader (8-pin HVSON)

• RoHS Compliant

0.2

ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)

1, 2, 3 : Source

: Gate

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC)

VDSS

VGSS

I^D(DC)

I^D(pulse)

P^T1

5, 6, 7, 8: Drain

150

3.65 0.2

0.6 0.15

Drain Current (pulse) ^Note1

0.7 0.15

Total Power Dissipation ^Note2

Total Power Dissipation (PW = 10 sec) ^Note2

Channel Temperature

1.5

°C

P^T2

4.6

T^ch

150

Storage Temperature

T^stg

−55 to +150

EQUIVALENT CIRCUIT

Single Avalanche Current ^Note3

Single Avalanche Energy ^Note3

I^AS

E^AS

Drain

THERMAL RESISTANCE

Body

Diode

Channel to Ambient Thermal Resistance ^Note2

Gate

R^th(ch-A)

R^th(ch-C)

83.3

1.5

°C/W

Channel to Case (Drain) Thermal Resistance

Gate

Protection

Diode

Source

Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%

2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm

3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G18628EJ1V0DS00 (1st edition)

Date Published May 2007 NS CP(K)

Printed in Japan

2007

12 3 4 5 6

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与UPA2725T1A-E2-AY相关器件

型号	品牌	获取价格	描述	数据表
UPA2725UT1A-E1-AY	RENESAS	获取价格	UPA2725UT1A-E1-AY
UPA2725UT1A-E1-AZ	RENESAS	获取价格	UPA2725UT1A-E1-AZ
UPA2725UT1A-E2-AZ	RENESAS	获取价格	UPA2725UT1A-E2-AZ
UPA2727T1A-E1-AY	NEC	获取价格	Power Field-Effect Transistor, 16A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Met
UPA2727T1A-E1-AZ	NEC	获取价格	Power Field-Effect Transistor, 16A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Met
UPA2727T1A-E2-AY	NEC	获取价格	Power Field-Effect Transistor, 16A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Met
UPA2727UT1A	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2727UT1A-E1-AY	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2727UT1A-E1-AZ	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2727UT1A-E2-AY	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR

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