Datasheet > UPA2725T1A-E1-AY

UPA2725T1A-E1-AY

更新时间： 2024-09-16 15:56:03

品牌	Logo	应用领域
日电电子 - NEC		开关脉冲光电二极管晶体管
页数	文件大小	规格书
6页	173K
描述
Power Field-Effect Transistor, 25A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HVSON-8

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技术参数
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UPA2725T1A-E1-AY 技术参数

生命周期：	Transferred	包装说明：	ROHS COMPLIANT, HVSON-8
Reach Compliance Code：	unknown	风险等级：	5.69
Is Samacsys：	N	雪崩能效等级（Eas）：	62 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	30 V	最大漏极电流 (ID)：	25 A
最大漏源导通电阻：	0.0075 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PDSO-F5	JESD-609代码：	e3
元件数量：	1	端子数量：	5
工作模式：	ENHANCEMENT MODE	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	最大脉冲漏极电流 (IDM)：	150 A
认证状态：	Not Qualified	表面贴装：	YES
端子面层：	PURE TIN	端子形式：	FLAT
端子位置：	DUAL	晶体管应用：	SWITCHING
晶体管元件材料：	SILICON	Base Number Matches：	1

UPA2725T1A-E1-AY 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

μPA2725T1A

SWITCHING

N-CHANNEL POWER MOSFET

PACKAGE DRAWING (Unit: mm)

DESCRIPTION

The μ PA2725T1A is N-channel MOSFET designed for DC/DC converter applications.

FEATURES

• Low on-state resistance

R^DS(on)1= 5.0 mΩ MAX. (VGS = 10 V, ID = 13 A)

R^DS(on)2= 7.5 mΩ MAX. (VGS = 4.5 V, ID = 13 A)

• Low input capacitance

0.2

0.10 S

5.4 0.2

Ciss = 2580 pF TYP. (VDS = 15 V, VGS = 0 V)

• Built-in gate protection diode

• Thin type surface mount package with heat spreader (8-pin HVSON)

• RoHS Compliant

0.2

ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)

1, 2, 3 : Source

: Gate

Drain to Source Voltage (VGS = 0 V)

Gate to Source Voltage (V^DS= 0 V)

Drain Current (DC)

VDSS

VGSS

I^D(DC)

I^D(pulse)

P^T1

5, 6, 7, 8: Drain

150

3.65 0.2

0.6 0.15

Drain Current (pulse) ^Note1

0.7 0.15

Total Power Dissipation ^Note2

Total Power Dissipation (PW = 10 sec) ^Note2

Channel Temperature

1.5

°C

P^T2

4.6

T^ch

150

Storage Temperature

T^stg

−55 to +150

EQUIVALENT CIRCUIT

Single Avalanche Current ^Note3

Single Avalanche Energy ^Note3

I^AS

E^AS

Drain

THERMAL RESISTANCE

Body

Diode

Channel to Ambient Thermal Resistance ^Note2

Gate

R^th(ch-A)

R^th(ch-C)

83.3

1.5

°C/W

Channel to Case (Drain) Thermal Resistance

Gate

Protection

Diode

Source

Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%

2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm

3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When

this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated

voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all products and/or types are available in every country. Please check with an NEC Electronics

sales representative for availability and additional information.

Document No. G18628EJ1V0DS00 (1st edition)

Date Published May 2007 NS CP(K)

Printed in Japan

2007

12 3 4 5 6

中文翻译

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与UPA2725T1A-E1-AY相关器件

型号	品牌	获取价格	描述	数据表
UPA2725T1A-E1-AZ	NEC	获取价格	Switching N-Channel Power MOSFET, HVSON, /Embossed Tape
UPA2725T1A-E2-AY	NEC	获取价格	Power Field-Effect Transistor, 25A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Me
UPA2725UT1A-E1-AY	RENESAS	获取价格	UPA2725UT1A-E1-AY
UPA2725UT1A-E1-AZ	RENESAS	获取价格	UPA2725UT1A-E1-AZ
UPA2725UT1A-E2-AZ	RENESAS	获取价格	UPA2725UT1A-E2-AZ
UPA2727T1A-E1-AY	NEC	获取价格	Power Field-Effect Transistor, 16A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Met
UPA2727T1A-E1-AZ	NEC	获取价格	Power Field-Effect Transistor, 16A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Met
UPA2727T1A-E2-AY	NEC	获取价格	Power Field-Effect Transistor, 16A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Met
UPA2727UT1A	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR
UPA2727UT1A-E1-AY	NEC	获取价格	MOS FIELD EFFECT TRANSISTOR

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