是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | HVSON | 包装说明: | , |
针数: | 8 | Reach Compliance Code: | compliant |
风险等级: | 5.83 | 配置: | Single |
最大漏极电流 (Abs) (ID): | 25 A | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最高工作温度: | 150 °C | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 4.6 W |
子类别: | FET General Purpose Power | 表面贴装: | YES |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
UPA2727T1A-E1-AY | NEC |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Met | |
UPA2727T1A-E1-AZ | NEC |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Met | |
UPA2727T1A-E2-AY | NEC |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Met | |
UPA2727UT1A | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
UPA2727UT1A-E1-AY | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
UPA2727UT1A-E1-AZ | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
UPA2727UT1A-E2-AY | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
UPA2727UT1A-E2-AY | RENESAS |
获取价格 |
POWER, FET | |
UPA2727UT1A-E2-AZ | NEC |
获取价格 |
MOS FIELD EFFECT TRANSISTOR | |
UPA2728GR | NEC |
获取价格 |
Power Field-Effect Transistor, 13A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Met |