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UPA2727T1A-E1-AY PDF预览

UPA2727T1A-E1-AY

更新时间： 2024-09-16 19:58:43
品牌 Logo 应用领域
日电电子 - NEC 开关脉冲光电二极管晶体管
页数 文件大小 规格书
6页 176K
描述
Power Field-Effect Transistor, 16A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, HVSON-8

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UPA2727T1A-E1-AY 技术参数

是否Rohs认证： 符合生命周期：Transferred
包装说明：SMALL OUTLINE, R-PDSO-F5针数：8
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.31雪崩能效等级（Eas）：26 mJ
外壳连接：DRAIN配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：30 V最大漏极电流 (ID)：16 A
最大漏源导通电阻：0.015 ΩFET 技术：METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：R-PDSO-F5JESD-609代码：e3
元件数量：1端子数量：5
工作模式：ENHANCEMENT MODE封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：SMALL OUTLINE
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：N-CHANNEL
最大脉冲漏极电流 (IDM)：96 A认证状态：Not Qualified
表面贴装：YES端子面层：MATTE TIN
端子形式：FLAT端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICONBase Number Matches：1

UPA2727T1A-E1-AY 数据手册

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DATA SHEET  
MOS FIELD EFFECT TRANSISTOR  
μPA2727T1A  
SWITCHING  
N-CHANNEL POWER MOSFET  
PACKAGE DRAWING (Unit: mm)  
DESCRIPTION  
The μ PA2727T1A is N-channel MOSFET designed for DC/DC converter applications.  
1
8
FEATURES  
2
3
4
7
6
5
• Low on-state resistance  
RDS(on)1 = 9.6 mΩ MAX. (VGS = 10 V, ID = 8 A)  
RDS(on)2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 8 A)  
• Low QGD  
6
0.2  
0.10 S  
5.4 0.2  
QGD = 3.5 nC TYP. (VDD = 15 V, ID = 16 A)  
• Built-in gate protection diode  
• Thin type surface mount package with heat spreader (8-pin HVSON)  
• RoHS Compliant  
1
0.2  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)  
1, 2, 3 : Source  
4
: Gate  
Drain to Source Voltage (VGS = 0 V)  
Gate to Source Voltage (VDS = 0 V)  
Drain Current (DC)  
VDSS  
VGSS  
ID(DC)  
ID(pulse)  
PT1  
30  
V
V
5, 6, 7, 8: Drain  
20  
16  
A
3.65 0.2  
0.6 0.15  
Drain Current (pulse) Note1  
96  
A
0.7 0.15  
Total Power Dissipation Note2  
Total Power Dissipation (PW =10 sec) Note2  
Channel Temperature  
1.5  
W
W
°C  
°C  
A
PT2  
4.6  
150  
Tch  
EQUIVALENT CIRCUIT  
Storage Temperature  
Tstg  
−55 to +150  
16  
Single Avalanche Current Note3  
Single Avalanche Energy Note3  
IAS  
Drain  
EAS  
26  
mJ  
Body  
Diode  
Gate  
THERMAL RESISTANCE  
Channel to Ambient Thermal Resistance Note2  
Rth(ch-A)  
Rth(ch-C)  
83.3  
2.0  
°C/W  
°C/W  
Gate  
Protection  
Diode  
Channel to Case (Drain) Thermal Resistance  
Source  
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%  
2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mm  
3. Starting Tch = 25°C, VDD = 15 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH  
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When  
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated  
voltage may be applied to this device.  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
2007  
Document No. G18630EJ2V0DS00 (2nd edition)  
Date Published April 2007 NS CP(K)  
Printed in Japan  
The mark <R> shows major revised points.  
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.  
123456

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