生命周期: | Active | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.6 |
其他特性: | HEIGHT DIMENSION INCLUDES TERMINAL ALSO | 应用: | SIGNAL SYNCHRONISATION |
ET产品最小值: | 3.5 V-us | 高度: | 6 mm |
绝缘电压: | 1000 V | 长度: | 7.6 mm |
安装特点: | SURFACE MOUNT | 功能数量: | 1 |
最高工作温度: | 75 °C | 最低工作温度: | -30 °C |
包装方法: | TAPE & REEL | 物理尺寸: | 7.6mm X 6.7mm X 6mm |
初级电感: | 30 µH | 表面贴装: | YES |
变压器类型: | PULSE TRANSFORMER | 宽度: | 6.7 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
TIM1112-15L | TOSHIBA |
获取价格 |
MICROWAVE POWER GaAs FET | |
TIM1112-2 | TOSHIBA |
获取价格 |
MICROWAVE POWER GaAs FET | |
TIM1112-4 | TOSHIBA |
获取价格 |
MICROWAVE POWER GaAs FET | |
TIM1112-4UL | TOSHIBA |
获取价格 |
MICROWAVE POWER GaAs FET | |
TIM1112-8 | TOSHIBA |
获取价格 |
MICROWAVE POWER GaAs FET | |
TIM1213-10 | TOSHIBA |
获取价格 |
TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, 2-11C1B, 3 PIN, FET RF Power | |
TIM1213-15 | TOSHIBA |
获取价格 |
TRANSISTOR RF POWER, FET, HERMETIC SEALED, 2-11C1B, 2 PIN, FET RF Power | |
TIM1213-15L | TOSHIBA |
获取价格 |
MICROWAVE POWER GaAs FET | |
TIM1213-2 | TOSHIBA |
获取价格 |
TRANSISTOR RF POWER, FET, 2-9D1B, 3 PIN, FET RF Power | |
TIM1213-2L | TOSHIBA |
获取价格 |
TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 2-9D1B, 2 PIN, FET |