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TIM1213-30L PDF预览

TIM1213-30L

更新时间： 2024-09-17 19:36:47
品牌 Logo 应用领域
东芝 - TOSHIBA 局域网放大器晶体管
页数 文件大小 规格书
2页 149K
描述
TRANSISTOR KU BAND, GaAs, N-CHANNEL, RF POWER, MOSFET, HERMETIC SEALED, 7-AA03A, 2 PIN, FET RF Power

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TIM1213-30L 技术参数

生命周期：Active包装说明：HERMETIC SEALED, 7-AA03A, 2 PIN
针数：2Reach Compliance Code：unknown
ECCN代码：EAR99Factory Lead Time：20 weeks
风险等级：5.57外壳连接：SOURCE
配置：SINGLE最小漏源击穿电压：15 V
最大漏极电流 (ID)：20 AFET 技术：METAL-OXIDE SEMICONDUCTOR
最高频带：KU BANDJESD-30 代码：R-CDFM-F2
元件数量：1端子数量：2
工作模式：DEPLETION MODE封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
极性/信道类型：N-CHANNEL表面贴装：YES
端子形式：FLAT端子位置：DUAL
晶体管应用：AMPLIFIER晶体管元件材料：GALLIUM ARSENIDE
Base Number Matches：1

TIM1213-30L 数据手册

 浏览型号TIM1213-30L的Datasheet PDF文件第2页 
MICROWAVE POWER GaAs FET  
MICROWAVE SEMICONDUCTOR  
TIM1213-30L  
TECHNICAL DATA  
FEATURES  
„ HIGH POWER  
P1dB=45.0dBm at 12.7GHz to 13.2GHz  
„ HIGH GAIN  
„ BROAD BAND INTERNALLY MATCHED FET  
„ HERMETICALLY SEALED PACKAGE  
G1dB=5.5dB at 12.7GHz to 13.2GHz  
„ LOW INTERMODULATION DISTORTION  
IM3=−28dBc at Po=38.0dBm Single Carrier Level  
RF PERFORMANCE SPECIFICATIONS ( Ta= 25 C )  
°
CHARACTERISTICS  
Output Power at 1dB Gain  
Compression Point  
Power Gain at 1dB Gain  
Compression Point  
Drain Current  
SYMBOL  
CONDITIONS  
UNIT MIN. TYP. MAX.  
P1dB  
dBm 44.0 45.0  
⎯
G1dB  
VDS  
= 10V  
dB  
4.5  
5.5  
⎯
IDSset≅7.0A  
f = 12.7 to 13.2GHz  
IDS1  
∆G  
A
dB  
%
10.0 11.0  
⎯
⎯
⎯
23  
Gain Flatness  
±0.8  
⎯
Power Added Efficiency  
3rd Order Intermodulation  
Distortion  
ηadd  
IM3  
⎯
Two-Tone Test  
Po= 38.0dBm  
dBc  
-25  
-28  
⎯
(Single Carrier Level)  
(VDS X IDS +Pin-P1dB)  
X Rth(c-c)  
Drain Current  
IDS2  
A
9.0  
10.1  
100  
⎯
⎯
C
°
Channel Temperature Rise  
ΔTch  
⎯
Recommended gate resistance(Rg) : Rg= 10 Ω(MAX.)  
ELECTRICAL CHARACTERISTICS ( Ta= 25 C )  
°
CHARACTERISTICS  
SYMBOL  
CONDITIONS  
VDS= 3V  
IDS= 9.6A  
VGSoff VDS= 3V  
IDS= 290mA  
VDS= 3V  
UNIT MIN. TYP. MAX.  
Transconductance  
gm  
S
5.5  
-2.0  
20.0  
⎯
⎯
-0.7  
⎯
⎯
-4.5  
⎯
Pinch-off Voltage  
V
Saturated Drain Current  
IDSS  
A
VGS= 0V  
IGS= -290 A  
Gate-Source Breakdown  
Voltage  
VGSO  
V
-5  
μ
⎯
C/W  
°
Thermal Resistance  
Rth(c-c) Channel to Case  
1.0  
1.1  
⎯
‹ The information contained herein is presented only as a guide for the applications of our products. No responsibility is  
assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use,  
No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others.  
The information contained herein is subject to change without prior notice. It is therefore advisable to contact TOSHIBA  
before proceeding with design of equipment incorporating this product.  
Dec. 2010  
12

中文翻译

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