Datasheet > SZESD7351XV2T1G

SZESD7351XV2T1G

更新时间： 2024-11-17 01:12:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	113K
描述
Transient Voltage Suppressors

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中文翻译

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数据手册
替代型号

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SZESD7351XV2T1G 数据手册

ESD7351, SZESD7351

Series

Transient Voltage

Suppressors

The ESD7351 Series is designed to protect voltage sensitive

components that require ultra−low capacitance from ESD and

transient voltage events. Excellent clamping capability, low

capacitance, low leakage, and fast response time, make these parts

ideal for ESD protection on designs where board space is at a

premium. Because of its low capacitance, it is suited for use in high

frequency designs such as USB 2.0 high speed and antenna line

applications.

http://onsemi.com

MARKING

DIAGRAMS

SOD−323

CASE 477

Features

• Low Capacitance (0.6 pF Max, I/O to GND)

• Low Clamping Voltage

SOD−523

CASE 502

• Stand−off Voltage: 3.3 V

• Low Leakage

• Response Time is < 1 ns

• Low Dynamic Resistance < 1 W

• IEC61000−4−2 Level 4 ESD Protection

SOD−923

CASE 514AB

AD M

• SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

X, XX = Specific Device Code

= Date Code

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

PIN CONFIGURATION

AND SCHEMATIC

Compliant

Typical Applications

• RF Signal ESD Protection

• RF Switching, PA, and Antenna ESD Protection

• Near Field Communications

Cathode

Anode

MAXIMUM RATINGS

Rating

IEC 61000−4−2 (ESD)

Symbol

Value

Unit

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Contact

Air

Total Power Dissipation on FR−5 Board

°P °

150

(Note 1) @ T = 25°C

Junction and Storage Temperature Range T , T

−55 to +150

260

°C

stg

Lead Solder Temperature − Maximum

(10 Second Duration)

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0 x 0.75 x 0.62 in.

See Application Note AND8308/D for further description of survivability specs.

Publication Order Number:

September, 2014 − Rev. 2

ESD7351/D

12 3 4 5 6 7 8

中文翻译

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SZESD7351XV2T1G 替代型号

型号	品牌	替代类型	描述	数据表
ESD7351HT1G	ONSEMI	完全替代	Transient Voltage Suppressors
ESD7351XV2T1G	ONSEMI	类似代替	Transient Voltage Suppressors

与SZESD7351XV2T1G相关器件

型号	品牌	获取价格	描述	数据表
SZESD7351XV2T5G	ONSEMI	获取价格	ESD Protection Diode
SZESD7361HT1G	ONSEMI	获取价格	ESD Protection Diodes
SZESD7361P2T5G	ONSEMI	获取价格	ESD Protection Diodes
SZESD7361XV2T1G	ONSEMI	获取价格	ESD Protection Diodes
SZESD7361XV2T5G	ONSEMI	获取价格	16V（Vz 最小值）低电容 ESD 保护二极管，用于高速数据线
SZESD7371HT1G	ONSEMI	获取价格	Ultra-Low Capacitance ESD Protection Diodes
SZESD7371P2T5G	ONSEMI	获取价格	Ultra-Low Capacitance ESD Protection Diodes
SZESD7371XV2T1G	ONSEMI	获取价格	Ultra-Low Capacitance ESD Protection Diodes
SZESD7371XV2T5G	ONSEMI	获取价格	低电容 ESD 防护
SZESD7410MXWT5G	ONSEMI	获取价格	超低电容 ESD 防护

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