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ESD7351XV2T1G PDF预览

ESD7351XV2T1G

更新时间: 2024-11-17 01:06:39
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 113K
描述
Transient Voltage Suppressors

ESD7351XV2T1G 数据手册

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ESD7351, SZESD7351  
Series  
Transient Voltage  
Suppressors  
The ESD7351 Series is designed to protect voltage sensitive  
components that require ultra−low capacitance from ESD and  
transient voltage events. Excellent clamping capability, low  
capacitance, low leakage, and fast response time, make these parts  
ideal for ESD protection on designs where board space is at a  
premium. Because of its low capacitance, it is suited for use in high  
frequency designs such as USB 2.0 high speed and antenna line  
applications.  
http://onsemi.com  
MARKING  
DIAGRAMS  
2
SOD−323  
CASE 477  
AF  
M
1
1
Features  
Low Capacitance (0.6 pF Max, I/O to GND)  
Low Clamping Voltage  
2
SOD−523  
CASE 502  
AE  
1
2
Stand−off Voltage: 3.3 V  
Low Leakage  
Response Time is < 1 ns  
Low Dynamic Resistance < 1 W  
IEC61000−4−2 Level 4 ESD Protection  
SOD−923  
CASE 514AB  
AD M  
SZ Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
X, XX = Specific Device Code  
M
= Date Code  
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
PIN CONFIGURATION  
AND SCHEMATIC  
Compliant  
Typical Applications  
RF Signal ESD Protection  
RF Switching, PA, and Antenna ESD Protection  
Near Field Communications  
1
2
Cathode  
Anode  
MAXIMUM RATINGS  
Rating  
IEC 61000−4−2 (ESD)  
Symbol  
Value  
Unit  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
Contact  
Air  
20  
20  
kV  
Total Power Dissipation on FR−5 Board  
°P °  
D
150  
mW  
(Note 1) @ T = 25°C  
A
Junction and Storage Temperature Range T , T  
−55 to +150  
260  
°C  
°C  
J
stg  
Lead Solder Temperature − Maximum  
(10 Second Duration)  
T
L
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. FR−5 = 1.0 x 0.75 x 0.62 in.  
See Application Note AND8308/D for further description of survivability specs.  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
September, 2014 − Rev. 2  
ESD7351/D  
 

ESD7351XV2T1G 替代型号

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SZESD7351XV2T1G ONSEMI

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