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ESD7382MUT5G PDF预览

ESD7382MUT5G

更新时间: 2024-02-20 19:22:32
品牌 Logo 应用领域
安森美 - ONSEMI 局域网测试二极管
页数 文件大小 规格书
6页 108K
描述
ESD Protection Diodes

ESD7382MUT5G 技术参数

是否无铅: 不含铅生命周期:Active
包装说明:R-PBCC-N2Reach Compliance Code:compliant
风险等级:5.78其他特性:EXCELLENT CLAMPING CAPABILITY, ULTRA LOW CAPACITANCE
最小击穿电压:5.2 V最大钳位电压:10 V
配置:SINGLE最小二极管电容:0.55 pF
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:R-PBCC-N2JESD-609代码:e4
湿度敏感等级:1元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:CHIP CARRIER
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:0.25 W参考标准:IEC-61000-4-2, 4-5
最大重复峰值反向电压:5 V最大反向电流:1 µA
反向测试电压:5 V表面贴装:YES
技术:AVALANCHE端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:NO LEAD端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

ESD7382MUT5G 数据手册

 浏览型号ESD7382MUT5G的Datasheet PDF文件第2页浏览型号ESD7382MUT5G的Datasheet PDF文件第3页浏览型号ESD7382MUT5G的Datasheet PDF文件第4页浏览型号ESD7382MUT5G的Datasheet PDF文件第5页浏览型号ESD7382MUT5G的Datasheet PDF文件第6页 
ESD7382MUT5G  
ESD Protection Diodes  
Micro−Packaged Diodes for ESD Protection  
The ESD7382 is designed to protect voltage sensitive components  
that require ultra−low capacitance from ESD and transient voltage  
events. Excellent clamping capability, low capacitance, low leakage,  
and fast response time, make these parts ideal for ESD protection on  
designs where board space is at a premium. Because of its low  
capacitance, it is suited for use in high frequency designs such as  
USB 2.0 high speed and antenna line applications.  
www.onsemi.com  
1
2
Cathode  
Anode  
Features  
Ultra−Low Capacitance: 0.37 pF  
Low Clamping Voltage  
MARKING  
DIAGRAM  
PIN 1  
Small Body Outline Dimensions: 0.60 mm x 0.30 mm  
Low Body Height: 0.3 mm  
Stand−off Voltage: 5.0 V  
X3DFN2  
CASE 152AF  
M
Low Leakage  
Insertion Loss: 0.030 dBm  
Response Time is < 1 ns  
2
= Specific Device Code  
(Rotated 270°)  
M
= Date Code  
Low Dynamic Resistance < 1 W  
IEC61000−4−2 Level 4 ESD Protection  
X2DFN2  
CASE 714AB  
(In Development)  
XX M  
G
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
XX = Specific Device Code  
Typical Applications  
M
= Date Code  
RF Signal ESD Protection  
RF Switching, PA, and Antenna ESD Protection  
Near Field Communications  
G
= Pb−Free Package  
ORDERING INFORMATION  
MAXIMUM RATINGS  
Device  
Package  
Shipping  
Rating  
IEC 61000−4−2 (ESD)  
Symbol  
Value  
Unit  
ESD7382MUT5G  
X3DFN2  
(Pb−Free)  
10,000 / Tape &  
Reel  
Contact  
Air  
20  
20  
kV  
ESD7382N2T5G  
(In Development)  
X2DFN2  
(Pb−Free)  
10,000 / Tape &  
Reel  
Total Power Dissipation on FR−5 Board  
°P °  
250  
mW  
D
(Note 1) @ T = 25°C  
A
Thermal Resistance, Junction−to−Ambient  
R
400  
−40 to +125  
260  
°C/W  
°C  
q
JA  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Junction and Storage Temperature Range T , T  
J
stg  
Lead Solder Temperature − Maximum  
(10 Second Duration)  
T
L
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. FR−5 = 1.0 x 0.75 x 0.62 in.  
See Application Note AND8308/D for further description of survivability specs.  
This document contains information on some products that are still under development.  
ON Semiconductor reserves the right to change or discontinue these products without  
notice.  
© Semiconductor Components Industries, LLC, 2017  
1
Publication Order Number:  
January, 2017 − Rev. 2  
ESD7382/D  
 

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