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ESD7410MXWT5G PDF预览

ESD7410MXWT5G

更新时间: 2024-11-17 11:01:35
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 124K
描述
超低电容 ESD 防护

ESD7410MXWT5G 数据手册

 浏览型号ESD7410MXWT5G的Datasheet PDF文件第2页浏览型号ESD7410MXWT5G的Datasheet PDF文件第3页浏览型号ESD7410MXWT5G的Datasheet PDF文件第4页浏览型号ESD7410MXWT5G的Datasheet PDF文件第5页浏览型号ESD7410MXWT5G的Datasheet PDF文件第6页 
ESD7410, SZESD7410  
Ultra-Low Capacitance ESD  
Protection  
Micro−Packaged Diodes for ESD Protection  
The ESD7410 is designed to protect voltage sensitive components  
that require ultra−low capacitance from ESD and transient voltage  
events. It has industry leading capacitance linearity over voltage  
making it ideal for RF applications. This capacitance linearity  
combined with the extremely small package and low insertion loss  
makes this part well suited for use in antenna line applications for  
wireless handsets and terminals.  
www.onsemi.com  
Features  
Industry Leading Capacitance Linearity Over Voltage  
Ultra−Low Capacitance: < 1.0 pF Max  
Insertion Loss: 0.1 dB at 1 GHz; 0.3 dB at 3 GHz  
Low Leakage: < 1 mA  
Protection for the following IEC Standards:  
IEC61000−4−2 (ESD): Level 4 30 kV Contact  
IEC61000−4−4 (EFT): 40 A −5/50 ns  
MARKING  
DIAGRAM  
X2DFN2  
CASE 714AB  
T M  
G
T
M
= Specific Device Code  
= Date Code  
IEC61000−4−5 (Lightning): 1 A (8/20 ms)  
ISO 10605 (ESD) 330 pF/2 kW 30 kV Contact  
SZ Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
ORDERING INFORMATION  
Device  
Package  
Shipping  
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
ESD7410N2T5G  
X2DFN2  
(Pb−Free)  
8000 / Tape &  
Reel  
Typical Applications  
SZESD7410N2T5G  
X2DFN2  
(Pb−Free)  
8000 / Tape &  
Reel  
RF Signal ESD Protection  
Active Antenna ESD Protection  
Near Field Communications  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Symbol  
Value  
Unit  
IEC 61000−4−2 Contact (Note 1)  
IEC 61000−4−2 Air  
ISO 10605 Contact (330 pF / 330 W)  
ISO 10605 Contact (330 pF / 2 kW)  
ISO 10605 Contact (150 pF / 2 kW)  
ESD  
30  
30  
30  
30  
30  
kV  
kV  
kV  
kV  
kV  
Total Power Dissipation (Note 2) @ T = 25°C  
°P °  
300  
400  
mW  
°C/W  
A
D
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
Junction and Storage Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
Lead Solder Temperature − Maximum  
(10 Second Duration)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Non−repetitive current pulse at T = 25°C, per IEC61000−4−2 waveform.  
A
2. Mounted with recommended minimum pad size, DC board FR−4  
© Semiconductor Components Industries, LLC, 2016  
1
Publication Order Number:  
October, 2016 − Rev. 0  
ESD7410/D  
 

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