Datasheet > ESD7371XV2T1G

ESD7371XV2T1G

更新时间： 2024-09-21 17:15:27

品牌	Logo	应用领域
友台半导体 - UMW		脉冲
页数	文件大小	规格书
6页	292K
描述
反向截止电压（Vrwm）:5V;极性/通道数（Channel）:1-Line，Unidirectional;击穿电压（VBR):7V;峰值脉冲电流(Ipp):1A;最大钳位电压(Vc):11V;电容（Cj）:0.39pF

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ESD7371XV2T1G 数据手册

UMW

ESD7371XV2T1G

Description

The ESD7371 Series is designed to protect voltage sensitive

components that require ultra−low capacitance from ESD and

transient voltage events. Excellent clamping capability, low

capacitance, high breakdown voltage, high linearity, low

leakage, and fast response time make these parts ideal for ESD

protection on designs where board space is at a premium. It has

industry leading capacitance linearity over voltage making it

ideal for RF applications. This capacitance linearity combined

with the extremely small package and low insertion loss makes

this part well suited for use in antenna line applications for

wireless handsets and terminals.

Cathode

Anode

Typical Applications

Features

• Industry Leading Capacitance Linearity Over Voltage

• Low Capacitance (0.7 pF Max, I/O to GND)

• Stand−off Voltage: 5.3 V

• RF Signal ESD Protection

• RF Switching, PA, and Antenna ESD Protection

• Near Field Communications

• Low Leakage: < 1 nA

• USB 2.0, USB 3.0

• Low Dynamic Resistance < 1 W

• IEC61000−4−2 Level 4 ESD Protection

• 1000 ESD IEC61000−4−2 Strikes ±8 kV Contact / Air Discharged

MAXIMUM RATINGS(T = 25°C unless otherwise noted)

Rating

IEC 61000−4−2 (ESD) (Note 1)

IEC 61000−4−5 (ESD) (Note 2)

Symbol

Value

Unit

3.0

Total Power Dissipation (Note 3) @ T_A= 25 °C

Thermal Resistance, Junction−to−Ambient

°P _D°

R _q_JA

300

400

°C/W

Junction and Storage Temperature Range

T _J, T _stg

−55 to

+150

°C

Lead Solder Temperature − Maximum

(10 Second Duration)

T _L

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Non−repetitive current pulse at T = 25°C, per IEC61000−4−2 waveform.

2. Non−repetitive current pulse at T = 25°C, per IEC61000−4−5 waveform.

3. Mounted with recommended minimum pad size, DC board FR−4

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

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