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ESD7371HT1G PDF预览

ESD7371HT1G

更新时间: 2024-05-27 20:45:33
品牌 Logo 应用领域
友台半导体 - UMW 脉冲
页数 文件大小 规格书
5页 363K
描述
反向截止电压(Vrwm):5V;极性/通道数(Channel):1-Line,Unidirectional;击穿电压(VBR):7V;峰值脉冲电流(Ipp):1A;最大钳位电压(Vc):11V;电容(Cj):0.39pF

ESD7371HT1G 技术参数

是否无铅:不含铅生命周期:Active
Reach Compliance Code:compliantFactory Lead Time:4 weeks
风险等级:1.5Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:7951806
Samacsys Pin Count:2Samacsys Part Category:TVS Diode (Uni-directional)
Samacsys Package Category:Small Outline DiodeSamacsys Footprint Name:SOD?323
Samacsys Released Date:2020-05-15 17:01:36Is Samacsys:N
Base Number Matches:1

ESD7371HT1G 数据手册

 浏览型号ESD7371HT1G的Datasheet PDF文件第2页浏览型号ESD7371HT1G的Datasheet PDF文件第3页浏览型号ESD7371HT1G的Datasheet PDF文件第4页浏览型号ESD7371HT1G的Datasheet PDF文件第5页 
R
UMW  
ESD7371HT1G  
The ESD7371 Series is designed to protect voltage  
sensitive components that require ultralow capacitance from  
ESD and transient voltage events. Excellent clamping  
capability, low capacitance, high breakdown voltage, high  
linearity, low leakage, and fast response time make these  
parts ideal for ESD protection on designs where board space  
is at a premium. It has industry leading capacitance linearity  
over voltage making it ideal for RF applications. This  
capacitance linearity combined with the extremely small  
package and low insertion loss makes this part well suited for  
use in antenna line applications for wireless handsets and  
terminals.  
1
2
Cathode  
Anode  
Typical Applications  
Features  
Industry Leading Capacitance Linearity Over Voltage  
Low Capacitance (0.7 pF Max, I/O to GND)  
Standoff Voltage: 5.3 V  
Low Leakage: < 1 nA  
Low Dynamic Resistance < 1  
RF Signal ESD Protection  
RF Switching, PA, and Antenna ESD Protection  
Near Field Communications  
USB 2.0, USB 3.0  
1000 ESD IEC6100042 Strikes ±8 kV Contact / Air  
Discharged  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Symbol  
Value  
20  
Unit  
kV  
A
IEC 61000−4−2 (ESD) (Note 1)  
IEC 61000−4−5 (ESD) (Note 2)  
3.0  
Total Power Dissipation (Note 3) @ T = 25°C  
°P °  
300  
400  
mW  
°C/W  
A
D
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
Junction and Storage Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
Lead Solder Temperature − Maximum  
(10 Second Duration)  
T
L
260  
°C  
1. Non−repetitive current pulse at T = 25°C, per IEC61000−4−2 waveform.  
A
2. Non−repetitive current pulse at T = 25°C, per IEC61000−4−5 waveform.  
A
3. Mounted with recommended minimum pad size, DC board FR−4  
www.umw-ic.com  
UTD Semiconductor Co.,Limited  
1
 

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