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ESD7371HT1G PDF预览

ESD7371HT1G

更新时间： 2024-01-19 06:53:06
品牌 Logo 应用领域
安森美 - ONSEMI PC电视
页数 文件大小 规格书
8页 114K
描述
Ultra-Low Capacitance ESD Protection Diodes

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中文翻译

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ESD7371HT1G 技术参数

是否无铅：不含铅生命周期：Active
Reach Compliance Code：compliantFactory Lead Time：4 weeks
风险等级：1.5Samacsys Confidence：4
Samacsys Status：ReleasedSamacsys PartID：7951806
Samacsys Pin Count：2Samacsys Part Category：TVS Diode (Uni-directional)
Samacsys Package Category：Small Outline DiodeSamacsys Footprint Name：SOD?323
Samacsys Released Date：2020-05-15 17:01:36Is Samacsys：N
Base Number Matches：1

ESD7371HT1G 数据手册

 浏览型号ESD7371HT1G的Datasheet PDF文件第2页浏览型号ESD7371HT1G的Datasheet PDF文件第3页浏览型号ESD7371HT1G的Datasheet PDF文件第4页浏览型号ESD7371HT1G的Datasheet PDF文件第5页浏览型号ESD7371HT1G的Datasheet PDF文件第6页浏览型号ESD7371HT1G的Datasheet PDF文件第7页 
ESD7371,  
SZESD7371 Series  
Ultra-Low Capacitance ESD  
Protection  
The ESD7371 Series is designed to protect voltage sensitive  
components that require ultra−low capacitance from ESD and  
transient voltage events. Excellent clamping capability, low  
capacitance, high breakdown voltage, high linearity, low leakage, and  
fast response time make these parts ideal for ESD protection on  
designs where board space is at a premium. It has industry leading  
capacitance linearity over voltage making it ideal for RF applications.  
This capacitance linearity combined with the extremely small package  
and low insertion loss makes this part well suited for use in antenna  
line applications for wireless handsets and terminals.  
http://onsemi.com  
MARKING  
DIAGRAMS  
2
SOD−323  
CASE 477  
AG  
M
1
1
Features  
2
SOD−523  
CASE 502  
AG  
• Industry Leading Capacitance Linearity Over Voltage  
• Low Capacitance (0.7 pF Max, I/O to GND)  
• Stand−off Voltage: 5.3 V  
• Low Leakage: < 1 nA  
• Low Dynamic Resistance < 1 W  
• IEC61000−4−2 Level 4 ESD Protection  
• 1000 ESD IEC61000−4−2 Strikes 8 kV Contact / Air Discharged  
1
2
SOD−923  
CASE 514AB  
AE M  
X, XX = Specific Device Code  
M
= Date Code  
• SZ Prefix for Automotive and Other Applications Requiring Unique  
Site and Control Change Requirements; AEC−Q101 Qualified and  
PPAP Capable  
PIN CONFIGURATION  
AND SCHEMATIC  
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS  
Compliant  
Typical Applications  
1
2
• RF Signal ESD Protection  
• RF Switching, PA, and Antenna ESD Protection  
• Near Field Communications  
• USB 2.0, USB 3.0  
Cathode  
Anode  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
dimensions section on page 5 of this data sheet.  
Rating  
Symbol  
Value  
20  
Unit  
kV  
A
IEC 61000−4−2 (ESD) (Note 1)  
IEC 61000−4−5 (ESD) (Note 2)  
3.0  
Total Power Dissipation (Note 3) @ T = 25°C  
°P °  
300  
400  
mW  
°C/W  
A
D
Thermal Resistance, Junction−to−Ambient  
R
q
JA  
Junction and Storage Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
Lead Solder Temperature − Maximum  
(10 Second Duration)  
T
L
260  
°C  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
1. Non−repetitive current pulse at T = 25°C, per IEC61000−4−2 waveform.  
A
2. Non−repetitive current pulse at T = 25°C, per IEC61000−4−5 waveform.  
A
3. Mounted with recommended minimum pad size, DC board FR−4  
See Application Note AND8308/D for further description of survivability specs.  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
September, 2014 − Rev. 1  
ESD7371/D  
 
12345678

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