ESD7551, SZESD7551
ESD Protection Diodes
Micro−Packaged Diodes for ESD Protection
The ESD7551 is designed to protect voltage sensitive components
that require ultra−low capacitance from ESD and transient voltage
events. Excellent clamping capability, low capacitance, low leakage,
and fast response time, make these parts ideal for ESD protection on
designs where board space is at a premium. Because of its low
capacitance, the part is well suited for use in high frequency designs
such as USB 2.0 high speed and antenna line applications.
www.onsemi.com
1
2
Cathode
Anode
Features
• Ultra−Low Capacitance (0.35 pF Max)
• Low Clamping Voltage
• Stand−off Voltage: 3.3 V
• Low Leakage
MARKING
DIAGRAM
X2DFN2
CASE 714AB
E M
G
• Response Time is < 1 ns
• Low Dynamic Resistance < 1 W
• Protection for the Following Standards:
E
M
= Specific Device Code
= Date Code
IEC 61000−4−2 (Level 4) & ISO 10605
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
ORDERING INFORMATION
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
†
Device
Package
Shipping
Compliant
ESD7551N2T5G
X2DFN2
(Pb−Free)
8000 / Tape &
Reel
Typical Applications
• RF Signal ESD Protection
SZESD7551N2T5G X2DFN2
(Pb−Free)
8000 / Tape &
Reel
• RF Switching, PA, and Antenna ESD Protection
• Near Field Communications
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Total Power Dissipation on FR−5 Board
°P °
250
mW
D
(Note 1) @ T = 25°C
A
Thermal Resistance, Junction−to−Ambient
R
400
−55 to +150
260
°C/W
°C
q
JA
Junction and Storage Temperature Range T , T
J
stg
Lead Solder Temperature − Maximum
(10 Second Duration)
T
L
°C
IEC 61000−4−2 Contact
IEC 61000−4−2 Air
ISO 10605 150 pF/2 kW
ISO 10605 330 pF/2 kW
ISO 10605 330 pF/330 W
ESD
25
25
30
30
20
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 x 0.75 x 0.62 in.
See Application Note AND8308/D for further description of survivability specs.
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
November, 2016 − Rev. 0
ESD7551/D