SZESD9B3.3ST5G

更新时间： 2024-09-28 11:01:35

品牌	Logo	应用领域
安森美 - ONSEMI		二极管瞬态抑制器
页数	文件大小	规格书
4页	127K
描述
ESD Protection Diodes, Bidirectional

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

SZESD9B3.3ST5G 数据手册

ESD9B3.3ST5G

Transient Voltage

Suppressors

Micro−Packaged Diodes for ESD Protection

The ESD9B Series is designed to protect voltage sensitive

components from ESD. Excellent clamping capability, low leakage,

and fast response time provide best in class protection on designs that

are exposed to ESD. Because of its small size, it is suited for use in

cellular phones, MP3 players, digital cameras and many other portable

applications where board space comes at a premium.

http://onsemi.com

Specification Features

• Low Capacitance 15 pF

• Low Clamping Voltage

• Small Body Outline Dimensions: 0.039″ x 0.024″ (1.0mm x 0.60mm)

• Low Body Height: 0.016″ (0.4 mm)

• Stand−off Voltage: 3.3 V

• Low Leakage

SOD−923

CASE 514AB

• Response Time is < 1 ns

• IEC61000−4−2 Level 4 ESD Protection

• This is a Pb−Free Device

MARKING DIAGRAM

X M

Mechanical Characteristics

CASE: Void-free, transfer-molded, thermosetting plastic

Epoxy Meets UL 94 V−0

LEAD FINISH: 100% Matte Sn (Tin)

MOUNTING POSITION: Any

= Specific Device Code

Date Code

QUALIFIED MAX REFLOW TEMPERATURE: 260°C

Device Meets MSL 1 Requirements

ORDERING INFORMATION

†

Device

Package

Shipping

MAXIMUM RATINGS

ESD9B3.3ST5G SOD−923

(Pb−Free)

8000/Tape & Reel

Rating

IEC 61000−4−2 (ESD)

Symbol

Value

Unit

Contact

Air

8.0

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

Total Power Dissipation on FR−5 Board

°P °

300

(Note 1) @ T = 25°C

Thermal Resistance, Junction−to−Ambient

400

−55 to +150

260

°C/W

°C

Junction and Storage Temperature Range

T , T

J stg

Lead Solder Temperature − Maximum

(10 Second Duration)

°C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0 x 0.75 x 0.62 in.

Publication Order Number:

September, 2008 − Rev. 0

ESD9B3.3S/D

12 3 4

中文翻译

下载PDF

与SZESD9B3.3ST5G相关器件

型号	品牌	获取价格	描述	数据表
SZESD9B5.0ST5G	ONSEMI	获取价格	Transient Voltage Suppressors
SZESD9C5.0ST5G	ONSEMI	获取价格	ESD Protection Diodes, SOD-923
SZESD9L3.3ST5G	ONSEMI	获取价格	ESD 保护二极管，超低电容，单向
SZESD9M5.0ST5G	ONSEMI	获取价格	Low Capacitance ESD Protection; Unidirectional
SZESD9R3.3ST5G	ONSEMI	获取价格	ESD 保护二极管，超低泄漏，低电容
SZESD9X12ST5G	ONSEMI	获取价格	ESD 保护二极管
SZESD9X3.3ST5G	ONSEMI	获取价格	Transient Voltage Suppressors
SZESD9X5.0ST5G	ONSEMI	获取价格	ESD Protection Diode
SZESD9X7.0ST5G	ONSEMI	获取价格	DIODE TVS DIODE, Transient Suppressor
SZESDL2012MX2WT5G	ONSEMI	获取价格	Extremely Low Voltage, Bidirectional ESD Protection Device in 0201 form factor featuring u

与SZESD9B3.3ST5G相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

16
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

13
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

17
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

26

产品中心

服务支持

精选活动

关于我们

帮助中心

SZESD9B3.3ST5G

SZESD9B3.3ST5G 数据手册

与SZESD9B3.3ST5G相关器件

与SZESD9B3.3ST5G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

SZESD9B3.3ST5G

SZESD9B3.3ST5G 数据手册

与SZESD9B3.3ST5G相关器件

与SZESD9B3.3ST5G相关文章

您还可以找

您在本页遇到什么问题？