Datasheet > SZESD7571MXWT5G

SZESD7571MXWT5G

更新时间： 2023-06-19 14:31:45

品牌	Logo	应用领域
安森美 - ONSEMI		二极管
页数	文件大小	规格书
6页	132K
描述
微型封装二极管，用于 ESD 防护

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中文翻译

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数据手册

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SZESD7571MXWT5G 数据手册

ESD7571, SZESD7571

Ultra-Low Capacitance ESD

Protection

Micro−Packaged Diodes for ESD Protection

The ESD7571 is designed to protect voltage sensitive components

that require ultra-low capacitance from ESD and transient voltage

events. Excellent clamping capability, low capacitance, high

breakdown voltage, high linearity, low leakage, and fast response time

make these parts ideal for ESD protection on designs where board

space is at a premium. It has industry leading capacitance linearity

over voltage making it ideal for RF applications. This capacitance

linearity combined with the extremely small package and low

insertion loss makes this part well suited for use in antenna line

applications for wireless handsets and terminals.

www.onsemi.com

MARKING

DIAGRAM

Features

X2DFN2

CASE 714AB

XX M

• Industry Leading Capacitance Linearity Over Voltage

• Ultra−Low Capacitance: 0.35 pF Max

• Stand−off Voltage: 5.3 V

XX = Specific Device Code

= Date Code

= Pb−Free Package

• Low Leakage: < 1 nA

• Low Dynamic Resistance: < 1 W

• IEC61000−4−2 Level 4 ESD Protection

• 1000 ESD IEC61000−4−2 Strikes 8 kV Contact / Air Discharged

ORDERING INFORMATION

• SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

†

Device

ESD7571N2T5G

Package

Shipping

X2DFN2

(Pb−Free)

8000 / Tape &

Reel

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

SZESD7571N2T5G X2DFN2

(Pb−Free)

8000 / Tape &

Reel

Typical Applications

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

• RF Signal ESD Protection

• RF Switching, PA, and Antenna ESD Protection

• Near Field Communications

• USB 2.0, USB 3.0

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

IEC 61000−4−2 Contact (ESD) (Note 1)

IEC 61000−4−2 Air (ESD) (Note 1)

ESD

IEC 61000−4−5 (ESD) (Note 2)

ESD

2.2

Total Power Dissipation (Note 3) @ T = 25°C

°P °

300

400

°C/W

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature Range

T , T

−55 to

+150

°C

stg

Lead Solder Temperature − Maximum

(10 Second Duration)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. At least 10 discharges at T = 25°C, per IEC61000−4−2 waveform.

2. Non−repetitive current pulse at T = 25°C, per IEC61000−4−5 waveform.

3. Mounted with recommended minimum pad size, DC board FR−4

Publication Order Number:

October, 2016 − Rev. 0

ESD7571/D

12 3 4 5 6

中文翻译

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与SZESD7571MXWT5G相关器件

型号	品牌	获取价格	描述	数据表
SZESD7571N2T5G	ONSEMI	获取价格	微型封装二极管，用于 ESD 防护
SZESD7951ST5G	ONSEMI	获取价格	ESD Protection Diode, Low Leakage, Fast Response Time, with Clamping Capability
SZESD7C3.3DT5G	ONSEMI	获取价格	ESD 保护二极管，SOT-723
SZESD7C5.0DT5G	ONSEMI	获取价格	ESD 保护二极管，SOT-723
SZESD8004MUTAG	ONSEMI	获取价格	ESD 保护阵列，USB 3.0
SZESD8006MUTAG	ONSEMI	获取价格	Low Capacitance ESD Protection Diode Array, Thunderbolt
SZESD8008MUTAG	ONSEMI	获取价格	ESD 保护阵列，一对一 HS
SZESD8104MUTAG	ONSEMI	获取价格	USB3.0 ESD Protection Array
SZESD8351HT1G	ONSEMI	获取价格	ESD8118MUTAG
SZESD8351MUT5G	ONSEMI	获取价格	ESD8118MUTAG

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