ESD7571, SZESD7571
Ultra-Low Capacitance ESD
Protection
Micro−Packaged Diodes for ESD Protection
The ESD7571 is designed to protect voltage sensitive components
that require ultra-low capacitance from ESD and transient voltage
events. Excellent clamping capability, low capacitance, high
breakdown voltage, high linearity, low leakage, and fast response time
make these parts ideal for ESD protection on designs where board
space is at a premium. It has industry leading capacitance linearity
over voltage making it ideal for RF applications. This capacitance
linearity combined with the extremely small package and low
insertion loss makes this part well suited for use in antenna line
applications for wireless handsets and terminals.
www.onsemi.com
MARKING
DIAGRAM
Features
X2DFN2
CASE 714AB
XX M
G
• Industry Leading Capacitance Linearity Over Voltage
• Ultra−Low Capacitance: 0.35 pF Max
• Stand−off Voltage: 5.3 V
XX = Specific Device Code
M
G
= Date Code
= Pb−Free Package
• Low Leakage: < 1 nA
• Low Dynamic Resistance: < 1 W
• IEC61000−4−2 Level 4 ESD Protection
• 1000 ESD IEC61000−4−2 Strikes 8 kV Contact / Air Discharged
ORDERING INFORMATION
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
†
Device
ESD7571N2T5G
Package
Shipping
X2DFN2
(Pb−Free)
8000 / Tape &
Reel
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
SZESD7571N2T5G X2DFN2
(Pb−Free)
8000 / Tape &
Reel
Typical Applications
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
• RF Signal ESD Protection
• RF Switching, PA, and Antenna ESD Protection
• Near Field Communications
• USB 2.0, USB 3.0
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Symbol
Value
Unit
IEC 61000−4−2 Contact (ESD) (Note 1)
IEC 61000−4−2 Air (ESD) (Note 1)
ESD
ESD
20
20
KV
kV
IEC 61000−4−5 (ESD) (Note 2)
ESD
2.2
A
Total Power Dissipation (Note 3) @ T = 25°C
°P °
300
400
mW
°C/W
A
D
Thermal Resistance, Junction−to−Ambient
R
q
JA
Junction and Storage Temperature Range
T , T
−55 to
+150
°C
J
stg
Lead Solder Temperature − Maximum
(10 Second Duration)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. At least 10 discharges at T = 25°C, per IEC61000−4−2 waveform.
A
2. Non−repetitive current pulse at T = 25°C, per IEC61000−4−5 waveform.
A
3. Mounted with recommended minimum pad size, DC board FR−4
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
October, 2016 − Rev. 0
ESD7571/D