Datasheet > SZESD7551

SZESD7551

更新时间： 2024-01-26 15:13:20

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
5页	71K
描述
ESD Protection Diodes

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中文翻译

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数据手册

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SZESD7551 数据手册

ESD7551, SZESD7551

ESD Protection Diodes

Micro−Packaged Diodes for ESD Protection

The ESD7551 is designed to protect voltage sensitive components

that require ultra−low capacitance from ESD and transient voltage

events. Excellent clamping capability, low capacitance, low leakage,

and fast response time, make these parts ideal for ESD protection on

designs where board space is at a premium. Because of its low

capacitance, the part is well suited for use in high frequency designs

such as USB 2.0 high speed and antenna line applications.

www.onsemi.com

Cathode

Anode

Features

• Ultra−Low Capacitance (0.35 pF Max)

• Low Clamping Voltage

• Stand−off Voltage: 3.3 V

• Low Leakage

MARKING

DIAGRAM

X2DFN2

CASE 714AB

E M

• Response Time is < 1 ns

• Low Dynamic Resistance < 1 W

• Protection for the Following Standards:

= Specific Device Code

= Date Code

IEC 61000−4−2 (Level 4) & ISO 10605

• SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

ORDERING INFORMATION

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

†

Device

Package

Shipping

Compliant

ESD7551N2T5G

X2DFN2

(Pb−Free)

8000 / Tape &

Reel

Typical Applications

• RF Signal ESD Protection

SZESD7551N2T5G X2DFN2

(Pb−Free)

8000 / Tape &

Reel

• RF Switching, PA, and Antenna ESD Protection

• Near Field Communications

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Total Power Dissipation on FR−5 Board

°P °

250

(Note 1) @ T = 25°C

Thermal Resistance, Junction−to−Ambient

400

−55 to +150

260

°C/W

°C

Junction and Storage Temperature Range T , T

stg

Lead Solder Temperature − Maximum

(10 Second Duration)

°C

IEC 61000−4−2 Contact

IEC 61000−4−2 Air

ISO 10605 150 pF/2 kW

ISO 10605 330 pF/2 kW

ISO 10605 330 pF/330 W

ESD

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0 x 0.75 x 0.62 in.

See Application Note AND8308/D for further description of survivability specs.

Publication Order Number:

November, 2016 − Rev. 0

ESD7551/D

12 3 4 5

中文翻译

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与SZESD7551相关器件

型号	品牌	获取价格	描述	数据表
SZESD7551MXWT5G	ONSEMI	获取价格	ESD 保护，微型封装二极管
SZESD7551N2T5G	ONSEMI	获取价格	ESD Protection Diodes
SZESD7561N2T5G	ONSEMI	获取价格	Micro−Packaged Diodes for ESD Protection
SZESD7571MXWT5G	ONSEMI	获取价格	微型封装二极管，用于 ESD 防护
SZESD7571N2T5G	ONSEMI	获取价格	微型封装二极管，用于 ESD 防护
SZESD7951ST5G	ONSEMI	获取价格	ESD Protection Diode, Low Leakage, Fast Response Time, with Clamping Capability
SZESD7C3.3DT5G	ONSEMI	获取价格	ESD 保护二极管，SOT-723
SZESD7C5.0DT5G	ONSEMI	获取价格	ESD 保护二极管，SOT-723
SZESD8004MUTAG	ONSEMI	获取价格	ESD 保护阵列，USB 3.0
SZESD8006MUTAG	ONSEMI	获取价格	Low Capacitance ESD Protection Diode Array, Thunderbolt

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