ESD7424
Ultra-Low Capacitance ESD
Protection
Micro−Packaged Diodes for ESD Protection
The ESD7424 is designed to protect voltage sensitive components
that require ultra−low capacitance from ESD and transient voltage
events. It has industry leading capacitance linearity over voltage
making it ideal for RF applications. This capacitance linearity
combined with the extremely small package and low insertion loss
makes this part well suited for use in antenna line applications for
wireless handsets and terminals.
www.onsemi.com
Features
MARKING
• Industry Leading Capacitance Linearity Over Voltage
• Ultra−Low Capacitance: < 1.0 pF Max
• Insertion Loss: 0.1 dB at 1 GHz; 0.50 dB at 3 GHz
• Low Leakage: < 1 mA
DIAGRAM
UDFN2
CASE 517CZ
KM
• Protection for the following IEC Standards:
♦ IEC61000−4−2 (ESD): Level 4 30 kV Contact
♦ ISO 10605 (ESD) 330 pF/330 W 30 kV Contact
K
M
= Specific Device Code
= Date Code
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
ORDERING INFORMATION
†
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Device
Package
Shipping
Compliant
ESD7424MUT5G
UDFN2
(Pb−Free)
8000 / Tape &
Reel
Typical Applications
SZESD7424MUT5G
UDFN2
(Pb−Free)
8000 / Tape &
Reel
• RF Signal ESD Protection
• Automotive Antenna ESD Protection
• Near Field Communications
• USB 2.0, USB 3.0
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Symbol
Value
Unit
IEC 61000−4−2 Contact (Note 1)
IEC 61000−4−2 Air
ISO 10605 Contact (330 pF / 330 W)
ISO 10605 Contact (330 pF / 2 kW)
ISO 10605 Contact (150 pF / 2 kW)
ESD
30
30
30
30
30
kV
kV
kV
kV
kV
Total Power Dissipation (Note 2) @ T = 25°C
°P °
300
400
mW
°C/W
A
D
Thermal Resistance, Junction−to−Ambient
R
q
JA
Junction and Storage Temperature Range
T , T
−55 to
+150
°C
J
stg
Lead Solder Temperature − Maximum
(10 Second Duration)
T
L
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse at T = 25°C, per IEC61000−4−2 waveform.
A
2. Mounted with recommended minimum pad size, DC board FR−4
© Semiconductor Components Industries, LLC, 2016
1
Publication Order Number:
June, 2017 − Rev. 0
ESD7424/D