Datasheet > SZESD7371XV2T5G

SZESD7371XV2T5G

更新时间： 2023-06-19 14:31:44

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	114K
描述
低电容 ESD 防护

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中文翻译

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数据手册

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SZESD7371XV2T5G 数据手册

ESD7371,

SZESD7371 Series

Ultra-Low Capacitance ESD

Protection

The ESD7371 Series is designed to protect voltage sensitive

components that require ultra−low capacitance from ESD and

transient voltage events. Excellent clamping capability, low

capacitance, high breakdown voltage, high linearity, low leakage, and

fast response time make these parts ideal for ESD protection on

designs where board space is at a premium. It has industry leading

capacitance linearity over voltage making it ideal for RF applications.

This capacitance linearity combined with the extremely small package

and low insertion loss makes this part well suited for use in antenna

line applications for wireless handsets and terminals.

http://onsemi.com

MARKING

DIAGRAMS

SOD−323

CASE 477

Features

SOD−523

CASE 502

• Industry Leading Capacitance Linearity Over Voltage

• Low Capacitance (0.7 pF Max, I/O to GND)

• Stand−off Voltage: 5.3 V

• Low Leakage: < 1 nA

• Low Dynamic Resistance < 1 W

• IEC61000−4−2 Level 4 ESD Protection

• 1000 ESD IEC61000−4−2 Strikes 8 kV Contact / Air Discharged

SOD−923

CASE 514AB

AE M

X, XX = Specific Device Code

= Date Code

• SZ Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

PIN CONFIGURATION

AND SCHEMATIC

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

Typical Applications

• RF Signal ESD Protection

• RF Switching, PA, and Antenna ESD Protection

• Near Field Communications

• USB 2.0, USB 3.0

Cathode

Anode

ORDERING INFORMATION

See detailed ordering and shipping information in the package

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

dimensions section on page 5 of this data sheet.

Rating

Symbol

Value

Unit

IEC 61000−4−2 (ESD) (Note 1)

IEC 61000−4−5 (ESD) (Note 2)

3.0

Total Power Dissipation (Note 3) @ T = 25°C

°P °

300

400

°C/W

Thermal Resistance, Junction−to−Ambient

Junction and Storage Temperature Range

T , T

−55 to

+150

°C

stg

Lead Solder Temperature − Maximum

(10 Second Duration)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. Non−repetitive current pulse at T = 25°C, per IEC61000−4−2 waveform.

2. Non−repetitive current pulse at T = 25°C, per IEC61000−4−5 waveform.

3. Mounted with recommended minimum pad size, DC board FR−4

See Application Note AND8308/D for further description of survivability specs.

Publication Order Number:

September, 2014 − Rev. 1

ESD7371/D

12 3 4 5 6 7 8

中文翻译

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与SZESD7371XV2T5G相关器件

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SZESD7481MUT5G	ONSEMI	获取价格	ESD 保护二极管，低电容，双向
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