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STW58N60DM2AG PDF预览

STW58N60DM2AG

更新时间: 2024-11-29 14:58:23
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意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
12页 722K
描述
汽车级N沟道600 V、0.052 Ohm典型值、50 A MDmesh DM2功率MOSFET,TO-247封装

STW58N60DM2AG 数据手册

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STW58N60DM2AG  
Automotive-grade N-channel 600 V, 0.052 Ω typ., 50 A  
MDmesh™ DM2 Power MOSFET in a TO-247 package  
Datasheet - production data  
Features  
RDS(on)  
Order code  
VDS  
ID  
PTOT  
max.  
STW58N60DM2AG 600 V 0.060 Ω 50 A  
360 W  
Designed for automotive applications and  
AEC-Q101 qualified  
3
2
Fast-recovery body diode  
Extremely low gate charge and input  
capacitance  
1
TO-247  
Low on-resistance  
100% avalanche tested  
Extremely high dv/dt ruggedness  
Zener-protected  
Figure 1: Internal schematic diagram  
D(2)  
Applications  
Switching applications  
Description  
This high voltage N-channel Power MOSFET is  
part of the MDmesh™ DM2 fast recovery diode  
series. It offers very low recovery charge (Qrr)  
and time (trr) combined with low RDS(on), rendering  
it suitable for the most demanding high efficiency  
converters and ideal for bridge topologies and  
ZVS phase-shift converters.  
G(1)  
S(3)  
AM15572v1_no_tab  
Table 1: Device summary  
Order code  
Marking  
Package  
Packing  
STW58N60DM2AG  
58N60DM2  
TO-247  
Tube  
July 2015  
DocID027912 Rev 2  
1/12  
www.st.com  
This is information on a product in full production.  

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