Datasheet > STW58N65DM2AG

STW58N65DM2AG

更新时间： 2024-11-29 14:58:15

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意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	282K
描述
汽车级N沟道650 V、0.058 Ohm典型值、48 A MDmesh DM2功率MOSFET，TO-247封装

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STW58N65DM2AG 数据手册

STW58N65DM2AG

Datasheet

Automotive-grade N-channel 650 V, 0.058 Ω typ., 48 A, MDmesh™ DM2

Power MOSFET in a TO-247 package

Features

DS(on)

max.

TOT

Order code

STW58N65DM2AG

650 V

0.065 Ω

48 A

360 W

•

AEC-Q101 qualified

Fast-recovery body diode

Extremely low gate charge and input capacitance

Low on-resistance

TO-247

100% avalanche tested

D(2)

Extremely high dv/dt ruggedness

Zener-protected

G(1)

Applications

•

Switching applications

S(3)

NG1D2S3Z

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-

recovery diode series. It offers very low recovery charge (Q_rr) and time (t_rr) combined

with low R_DS(on), rendering it suitable for the most demanding high-efficiency

converters and ideal for bridge topologies and ZVS phase-shift converters.

Product status link

STW58N65DM2AG

Product summary

Order code

STW58N65DM2AG

Marking

Package

Packing

58N65DM2

TO-247

Tube

DS11265 - Rev 3 - July 2018

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...13

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