Datasheet > STU6N65M2

STU6N65M2

更新时间： 2024-11-03 14:57:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
18页	732K
描述
N沟道650 V、1.2 Ohm典型值、4 A MDmesh M2功率MOSFET，IPAK封装

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中文翻译

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技术参数
数据手册

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STU6N65M2 技术参数

生命周期：	Active	Reach Compliance Code：	compliant
ECCN代码：	EAR99	Factory Lead Time：	43 weeks 2 days
风险等级：	1.55	峰值回流温度（摄氏度）：	NOT SPECIFIED
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

STU6N65M2 数据手册

STF6N65M2, STP6N65M2,

STU6N65M2

N-channel 650 V, 1.2 Ω typ., 4 A MDmesh™ M2

Power MOSFETs in TO-220FP, TO-220 and IPAK packages

Datasheet

preliminary data

Features

TAB

Order codes

V_DS

R_DS(on)max

I_D

STF6N65M2

STP6N65M2

STU6N65M2

650 V

1.35 Ω

4 A

TO-220FP

TO-220

TAB

• Extremely low gate charge

• Excellent output capacitance (C_OSS) profile

• 100% avalanche tested

IPAK

• Zener-protected

Applications

Figure 1. Internal schematic diagram

, TAB

• Switching applications

Description

These devices are N-channel Power MOSFETs

developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical

structure, the devices exhibit low on-resistance

and optimized switching characteristics, rendering

them suitable for the most demanding high

efficiency converters.

AM15572v1

Table 1. Device summary

Order codes

Marking

Package

Packaging

STF6N65M2

STP6N65M2

STU6N65M2

TO-220FP

TO-220

IPAK

6N65M2

Tube

August 2014

DocID026776 Rev 1

1/18

This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

www.st.com

12 3 4 5 6 7...18

中文翻译

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