Datasheet > STU6N65K3

STU6N65K3

更新时间： 2024-11-02 12:01:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	906K
描述
N-channel 650 V, 1.1 ohm typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, I PAKFP, IPAK

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中文翻译

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技术参数
数据手册

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STU6N65K3 技术参数

是否Rohs认证：	符合	生命周期：	Not Recommended
Reach Compliance Code：	compliant	ECCN代码：	EAR99
Factory Lead Time：	43 weeks 2 days	风险等级：	7.91
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

STU6N65K3 数据手册

STF6N65K3, STFI6N65K3, STU6N65K3

N-channel 650 V, 1.1 Ω typ., 5.4 A SuperMESH3™ Power MOSFET

in TO-220FP, I²PAKFP, IPAK

Datasheet — production data

Features

Order codes V_DSSR_DS(on)max.

I_D

Ptot

STF6N65K3

TAB

30 W

STFI6N65K3 650 V

STU6N65K3

< 1.3 Ω

5.4 A

110 W

■ 100% avalanche tested

TO-220FP

I²PAKFP

IPAK

■ Extremely high dv/dt capability

■ Gate charge minimized

■ Very low intrinsic capacitance

■ Improved diode reverse recovery

characteristics

Figure 1.

Internal schematic diagram

■ Zener-protected

D(2,TAB)

Applications

■ Switching applications

G(1)

Description

These SuperMESH3™ Power MOSFETs are the

result of improvements applied to

STMicroelectronics’ SuperMESH™ technology,

combined with a new optimized vertical structure.

These devices boast an extremely low on-

resistance, superior dynamic performance and

high avalanche capability, rendering them suitable

for the most demanding applications.

S(3)

AM01476v1

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STF6N65K3

STFI6N65K3

STU6N65K3

TO-220FP

I²PAKFP

IPAK

6N65K3

Tube

November 2012

Doc ID 18424 Rev 2

1/16

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...16

中文翻译

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